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Method for manufacturing image sensor

A technology of image sensor and manufacturing method, applied in semiconductor/solid-state device manufacturing, electric solid-state device, semiconductor device, etc., capable of solving problems such as degraded image sensor performance

Inactive Publication Date: 2008-12-31
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such defects cause dark current and thus degrade the performance of the image sensor

Method used

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  • Method for manufacturing image sensor
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  • Method for manufacturing image sensor

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Embodiment Construction

[0018] In the following detailed description of embodiments, reference will now be made in detail to specific embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts. These specific embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the present invention. Furthermore, it should be understood that the various embodiments of the invention, although different, are not necessarily mutually exclusive. For example, a particular feature, structure, or characteristic described in one embodiment can be included within other embodiments. Accordingly, the following detailed description should not be taken in a limiting sense, and the scope of the i...

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Abstract

A method for manufacturing an image sensor is disclosed. The manufacturing method includes forming a unit pixel including a photodiode and a gate on a semiconductor substrate, forming an interlayer insulating layer on the semiconductor substrate including the unit pixel, planarizing the interlayer insulating layer, forming a protection layer with SiH4 on the interlayer insulating layer, and planarizing the protection layer.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2007-0062164 filed on June 25, 2007, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to a semiconductor device, and more particularly, to a method for manufacturing an image sensor. Background technique [0004] A Complementary Metal Oxide Semiconductor (CMOS) image sensor, which is one example of an image sensor implementation, uses CMOS technology including both a control circuit and a signal processing circuit as peripheral circuits. [0005] In typical implementations, a CMOS image sensor includes a plurality of photodiodes and MOS transistors, depending on the number of pixels desired. In operation, the sensor detects an electrical signal output by each unit pixel (unit pixel) by switching sequentially, thereby generating an image. [0006] In such a CMOS image sensor, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/822H01L21/768H01L27/146H01L23/544
CPCH01L27/14636H01L27/14683H01L27/146
Inventor 郑暎锡李汉春
Owner DONGBU HITEK CO LTD