Semiconductor package substrate and fabrication method thereof

Abstract

The invention relates to a semiconductor packaging substrate and a fabricating method thereof. The invention is characterized in that electric connection pads on the surface of a circuit board provided with a wire bonding area and a lug area synchronously form a nickel / palladium / metal layer, so as to reduce the flow of process and the waste of time. The effect for enhancing the binding force between the substrate and the chip exists in the nickel / palladium / metal layer.

Description

technical field [0001] The invention relates to a semiconductor packaging substrate and a manufacturing method thereof, in particular to a semiconductor packaging substrate suitable for simultaneously forming a nickel / palladium / gold layer in a wire bonding area and a bump area and a manufacturing method thereof. Background technique [0002] Due to the increasingly thinner, thinner and multi-functional requirements of electronic products, the development of integrated circuit chip packaging technology is also promoted, which in turn promotes the multi-pin and thinner chip packaging. [0003] In order to adapt to the trend of thinner and smaller and to pursue high-density packaging, Ball Grid Array, Chip Scale Package, and Flip Chip technologies have become mainstream packaging technologies. Therefore, requirements such as small area, improved I / O (input / output) pins, wiring densification, low noise, product reliability, and even manufacturing cost have become important issue...

AI Technical Summary

Problems solved by technology

[0007] In the existing process, if the gold formed in the bump area of ​​the electrical connection pad is too thick, there will be ion migration to the solder bump, resulting in poor surface bonding

However, if the gold is too thin in the wire bonding area, its wire bonding ability will be reduced, and a small part of nickel will migrate to gold, which will cause problems in the bonding degree of wire bonding

Also, in the existing process, the formation of the tin layer still has the problem of ion migration, which will cause poor surface bonding, resulting in a waste of production costs and a waste of production time.

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