Microwave plasma source and plasma processing apparatus
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- TOKYO ELECTRON LTD
- Publication Date
- 2009-03-11
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Abstract
Description
technical field
[0001] The present invention relates to a microwave plasma source and a plasma treatment device using the microwave plasma source. Background technique
[0002] In the manufacturing process of semiconductor devices and liquid crystal display devices, in order to perform plasma processing such as etching processing or film forming processing on substrates such as semiconductor wafers and glass substrates, plasma etching devices such as plasma etching devices or plasma CVD film forming devices are used. Processing device.
[0003] As a method of generating plasma in a plasma processing apparatus, there is known a method of supplying processing gas into a chamber in which parallel plate electrodes are arranged, supplying predetermined power to the parallel plate electrodes, and generating plasma by capacitive coupling between the electrodes. and a method in which electrons are accelerated by an electric field generated by microwaves and a magnetic field generat...