Microwave plasma source and plasma processing apparatus

A technology of microwave plasma and microwave plasma, which is applied in the direction of plasma, semiconductor/solid-state device manufacturing, gaseous chemical plating, etc., can solve problems such as complex devices, and achieve the effect of eliminating the influence of reflection

Active Publication Date: 2009-03-11
TOKYO ELECTRON LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0009] However, in such a technique, it is necessary to install two or more large-sized stub tuners (stub tuners) in each assigned channel to perform tuning of the mismatching part, so the device becomes complicated.
In addition, there is a problem that it is not always possible to adjust the impedance of the mismatching part with high precision.

Method used

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  • Microwave plasma source and plasma processing apparatus
  • Microwave plasma source and plasma processing apparatus
  • Microwave plasma source and plasma processing apparatus

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Embodiment Construction

[0049] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. 1 is a cross-sectional view showing a schematic configuration of a plasma processing apparatus equipped with a microwave plasma source according to an embodiment of the present invention, and FIG. 2 is a configuration diagram showing the configuration of the microwave plasma source according to this embodiment.

[0050] The plasma processing apparatus 100 is configured as a plasma etching apparatus for performing, for example, etching processing on a wafer as a plasma processing, and includes: an airtightly formed substantially cylindrical grounded chamber 1 made of a metal material such as aluminum or stainless steel; and a microwave plasma source 2 for forming microwave plasma in the chamber 1. An opening 1 a is formed in an upper portion of the chamber 1 , and the microwave plasma source 2 is installed so as to face the inside of the chamber 1 from the openin...

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Abstract

A microwave plasma source (2) is provided with a microwave outputting section (30) which outputs microwaves in a plurally divided state, and a plurality of antenna modules (41) for guiding the plurally divided microwaves into a chamber. Each antenna module (41) is provided with an amplifier section (42) having an amplifier (47) for amplifying the microwaves, an antenna section (44) having an antenna (51) for radiating the amplified microwaves into the chamber, and a tuner (43) for adjusting impedance in a microwave transmission path. The tuner (43) is integrally arranged with the antenna section (44) to be close to the amplifier (47).

Description

technical field [0001] The present invention relates to a microwave plasma source and a plasma treatment device using the microwave plasma source. Background technique [0002] In the manufacturing process of semiconductor devices and liquid crystal display devices, in order to perform plasma processing such as etching processing or film forming processing on substrates such as semiconductor wafers and glass substrates, plasma etching devices such as plasma etching devices or plasma CVD film forming devices are used. Processing device. [0003] As a method of generating plasma in a plasma processing apparatus, there is known a method of supplying processing gas into a chamber in which parallel plate electrodes are arranged, supplying predetermined power to the parallel plate electrodes, and generating plasma by capacitive coupling between the electrodes. and a method in which electrons are accelerated by an electric field generated by microwaves and a magnetic field generat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065C23C16/511H01L21/205H05H1/46
CPCH01J37/32256H01J37/3222H05H1/46H01J37/32192C23C16/511H01L21/205H01L21/3065
Inventor 河西繁
Owner TOKYO ELECTRON LTD
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