Photoelectric conversion apparatus and imaging system using the photoelectric conversion apparatus
A technology of photoelectric conversion devices and photoelectric conversion elements, applied in radiation control devices, circuits, electrical components, etc., to achieve the effects of reduced leakage and low-noise photoelectric conversion devices
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no. 1 example
[0037] refer to figure 2 , Figure 3A and Figure 3B The configuration of this embodiment is described. figure 2 yes figure 1 A floor plan view of four pixels 100 is shown. Each of the pixels 100 includes: a semiconductor region 201 in which one of the photoelectric conversion elements 101 is formed, the surface of which is a light receiving surface; a second semiconductor region 202 in which one of the charge holding portions 102 is formed; The third semiconductor region 203, in which one of the floating diffusions 103 is formed; the first gate electrode 204, which extends over the second semiconductor region 202; the second gate electrode 205; the contact point 206, for connecting the third semiconductor The region 203 is electrically connected to one of the amplification MOS transistors 106; and an element isolation region 207 which electrically isolates elements from each other and defines an active region. The element isolation region 207 is configured to include a...
no. 2 example
[0047] This embodiment differs from the first embodiment in the arrangement of the element isolation region 207 , more specifically, in the arrangement relationship between the second semiconductor region 202 and the element isolation region 207 . refer to Figure 4A and Figure 4B to describe this embodiment. Figure 4A is the floor plan, Figure 4B is a typical cross section. Figure 4A and figure 2 correspond, Figure 4B and Figure 3D correspond. exist Figure 4A and Figure 4B In , configurations similar to those of the first embodiment are denoted by the same reference numerals as those of the first embodiment, and their descriptions are omitted.
[0048] exist Figure 4A and Figure 4B Here, for description, parts of the element isolation region 207 close to the second semiconductor region 202 are denoted by 207a and 207b. Since the shape and arrangement of the element isolation region 207 defining the first active region 208 are different from those of the...
no. 3 example
[0052] This embodiment differs from the first embodiment in the arrangement of the second semiconductor region 202 and the element isolation region 207 . refer to Figure 5 , Figure 6A and Figure 6B to describe this embodiment. Figure 5 is the floor plan, Figure 6A and Figure 6B is a typical cross section. Figure 5 and figure 2 correspond, Figure 6A and Figure 3D correspond. Figure 6B is a view illustrating a modification of the present embodiment, and with Figure 6A correspond. Configurations similar to those of the first embodiment are denoted by the same reference numerals as those of the first embodiment, and their descriptions are omitted.
[0053] like Figure 5 As shown, the second semiconductor region 202 does not extend to the end of the first active region 208 , and a region 501 exists between the element isolation region 207 and the second semiconductor region 202 . in with Figure 5 corresponding Figure 6A , there are regions 501a and 501...
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