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Bevel etcher with gap control

An etching and bevel technology, applied in semiconductor/solid-state device manufacturing, discharge tubes, electrical components, etc., can solve problems such as contamination of substrates, peeling or peeling, and weak adhesion

Active Publication Date: 2011-07-13
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As successive by-product layers are deposited on the top and bottom surfaces of the beveled edge of the substrate due to multiple different etch processes, the bond between the by-product layer and the substrate will eventually weaken and the by-product layer will tend to Falling off or peeling off on other substrates during transport, thereby contaminating other substrates

Method used

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  • Bevel etcher with gap control
  • Bevel etcher with gap control
  • Bevel etcher with gap control

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Experimental program
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Embodiment Construction

[0014] Figure 1A A schematic cross-sectional view of a bevel etching chamber or bevel etcher 100 is shown. Figure 1B show Figure 1A Magnified view of region A in the middle. As noted, the semiconductor 120 is interposed between the upper electrode assembly 102 and the lower electrode assembly 104 and has a beveled edge 122 ( Figure 1B ) including the top and bottom surfaces of the substrate edge. The upper electrode assembly 102 includes an anode 108 and an insulator layer or insulator 110 disposed below the anode 108 or attached to its lower surface. The insulator 110 prevents the formation of an electric or electromagnetic field between the anode 108 and the middle portion of the substrate 120 during etching of the bevel 122 . The lower electrode assembly 104 includes a cathode 112 connected to a radio frequency (RF) power source, an electrostatic chuck 114 for clamping the substrate 120 and a support 116 for supporting the electrostatic chuck 114 . The RF power suppl...

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Abstract

A device for cleaning a bevel edge of a semiconductor substrate. The device includes a lower electrode assembly that has a top surface and is adapted to support the substrate and an upper electrode assembly that has a bottom surface opposing the top surface. The lower and upper electrode assemblies generate plasma for cleaning the bevel edge of the substrate disposed between the top and bottom surfaces during operation. The device also includes a mechanism for suspending the upper electrode assembly over the lower support and adjusting the tilt angle and horizontal translation of the bottom surface relative to the top surface.

Description

Background technique [0001] Integrated circuits are formed from wafers or substrates on which patterned microelectronic layers are formed. In processing substrates, plasmas are often used to etch desired portions of films deposited on the substrate. Typically, the etch plasma density decreases closer to the edge of the substrate, which results in layers of polysilicon, nitride, metal, etc. (collectively, by-product layers) accumulating on the top and bottom surfaces of the beveled edge of the substrate. As successive by-product layers are deposited on the top and bottom surfaces of the beveled edge of the substrate due to multiple different etch processes, the bond between the by-product layer and the substrate will eventually weaken and the by-product layer will tend to During the transfer process, it falls off or peels off on other substrates, thereby contaminating other substrates. Contents of the invention [0002] In one embodiment, a bevel etcher for plasma cleaning ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065
CPCH01J37/32568H01L21/0209H01J2237/335H01J37/32366H01L21/67069H01L21/3065
Inventor 安德鲁·D·贝利三世艾伦·M·舍普格雷戈里·塞克斯顿安德拉斯·库蒂金允尚威廉·S·肯尼迪
Owner LAM RES CORP