Data write-in method, storage system and controller used for quick flash memory

Abstract

The invention relates to a method for writing-in data in a multi level cell (MLC) NAND quick flash memory and a storage system and a controller which use the method. The MLC NAND quick flash memory comprises a plurality of area blocks, wherein each area block comprises a plurality of page addresses, and the page addresses are divided into a plurality of upper page addresses and a plurality of lower page addresses with the write-in speed higher than that of the upper page addresses. The data write-in method comprises the following steps: receiving a write-in command and data to be written-in and writing-in the data to the page addresses, wherein the page addresses to be written-in are skipped when the page addresses to be written-in are the upper page addresses and the lower page addresses corresponding to the page addresses to be written-in already store effective data written-in by the previous write-in command. Therefore, the correctness of the data written-in by the previous write-in command is ensured when a programming error occurs in the MLC NAND quick flash memory.

Description

technical field [0001] The present invention relates to a data writing method, and in particular to a data writing method for writing data to multi-level memory cell (Multi Level Cell, MLC) and non-(NAND) flash memory and using the method storage system and controller. Background technique [0002] The rapid growth of digital cameras, cell phone cameras and MP3 players over the past few years has led to a rapid increase in consumer demand for storage media. Because flash memory (F1ash Memory) has data non-volatility, power saving, small size and no mechanical The structure and other characteristics are suitable for portable applications, and are most suitable for use in such portable battery-powered products. In addition to the built-in memory needs of portable products, for external products such as small memory cards and flash drives, each person may have multiple flash drives and small memory cards at the same time, so the market size is larger than those devices. There...

AI Technical Summary

Problems solved by technology

[0003] As flash memory develops from Single Level Cell (SLC) NAND flash memory to MLC NAND flash memory, due to the physical characteristics of MLC NAND flash memory, the page address ( page address) the charge is unstable and may affect adjacent page addresses, thus resulting in a situation where MLC NAND flash memory has a large capacity but poor storage reliability

That is to say, when a programming error occurs in the page address written by this write command, it may cause an error in the previously written data.

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