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Non-volatile memory cell and manufacturing method thereof

A technology of non-volatile storage and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, transistors, etc., can solve the problems of silicon nitride residue, affecting the electrical properties and stability of components, and improve the gate oxide layer. The effect of thinner areas

Active Publication Date: 2011-06-15
NAN YA TECH
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Problems solved by technology

However, in the manufacturing method of the vertical dual-bit NAND memory cell of the above-mentioned known technology, in the step of dry etching the ONO dielectric layer 16, silicon nitride residues are likely to be generated at the corners of the side walls, and the manufactured memory cells will have a gate oxide layer. 13 Problems caused by thinner areas, thus affecting the electrical and stability of components

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  • Non-volatile memory cell and manufacturing method thereof
  • Non-volatile memory cell and manufacturing method thereof
  • Non-volatile memory cell and manufacturing method thereof

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Embodiment Construction

[0023] Use the following Figure 2(A) to Figure 2(M) An embodiment of the method of manufacturing the nonvolatile memory cell of the present invention will be described.

[0024] First please refer to FIG. 2(A), a semiconductor substrate 20 is provided, the semiconductor substrate 20 is, for example, a silicon substrate, a conductive layer 21 is formed on the semiconductor substrate 20, and a spacer layer 22 is formed on the conductive layer 21 , wherein the spacer layer 22 may be made of silicon nitride.

[0025] Then please refer to FIG. 2(B), etch part of the spacer layer 22 and the conductive layer 21 to above the semiconductor substrate 20 to form at least one trench 25. As shown in the figure, each trench 25 includes the bottom of the trench. 250 and the sidewall 251 of the trench.

[0026] Then please refer to FIG. 2(C), a first oxide layer 23 is formed at the bottom 250 of the trench 25. In this embodiment, after an oxide layer is deposited flatly by chemical vapor d...

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Abstract

The invention provides a non-volatile memory cell and a manufacturing method thereof. The method comprises the following steps: providing a semiconductor substrate which is provided with a conductive layer and a spacer layer in order; defining at least one trench between the spacer layer and the conductive layer; forming a first oxidization layer at the bottom of the trench; forming a dielectric layer on the side wall of the trench, above the first oxidization layer and above the spacer layer; forming a first polysilicon layer in the trench; and removing the dielectric layer above the spacer layer to form the basic structure of the non-volatile memory cell of the invention.

Description

technical field [0001] The invention relates to a non-volatile storage unit and its manufacturing method, in particular to a vertical double-bit NAND storage unit and its manufacturing method. Background technique [0002] Flash memory (Flash) is the mainstream of non-volatile memory. It is mainly divided into NOR Flash and NAND Flash. Among them, NAND Flash is especially suitable for storing a large amount of data because of its high density and high writing speed. In recent years, with various With the rise of this kind of portable multimedia storage, the market demand for NAND Flash has greatly increased. Therefore, the industry continues to research and improve the process technology to reduce the size of components and improve product reliability. [0003] The traditional storage structure is to form a planar storage unit on a silicon substrate, and the process must be repeated according to the number of layers designed. Therefore, there will be a problem that it is dif...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/336H01L21/8247H01L29/423H01L29/788H01L27/115
Inventor 黄信斌萧清南黄仲麟
Owner NAN YA TECH
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