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Storage unit sharing split gate type flash memory

A technology of split-gate flash memory and shared storage, applied in information storage, static memory, read-only memory, etc., can solve problems such as device programming voltage reduction

Active Publication Date: 2012-12-12
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

When traditional flash memory is moving towards higher storage density, due to structural limitations, it will face great challenges to further reduce the programming voltage of the device

Method used

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  • Storage unit sharing split gate type flash memory
  • Storage unit sharing split gate type flash memory
  • Storage unit sharing split gate type flash memory

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Embodiment Construction

[0030] In order to better understand the technical content of the present invention, specific embodiments are given together with the attached drawings for description as follows.

[0031] The present invention proposes a split-gate flash memory with a shared storage unit, which can avoid the problem of over-erasing while reducing the storage area of ​​a single byte.

[0032] Please refer to figure 1 , figure 1 Shown is a schematic diagram of the split-gate flash memory structure of the shared storage unit in the preferred embodiment of the present invention. The present invention proposes a split-gate flash memory for sharing memory cells, which includes: a semiconductor substrate 100 with a source region 110 and a drain region 120 arranged at intervals thereon; a channel region 130 located between the source region 110 and the drain region 120 Between the drain regions 120; the memory cell 200 is located above the channel region 130; the word line 300 is located above the ...

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Abstract

The invention provides a storage unit sharing split gate type flash memory, which comprises a semiconductor substrate provided with a source electrode area and a drain electrode area which are arranged at intervals, a channel area arranged between the source electrode area and the drain electrode area, a storage unit arranged above the channel area, a word line arranged above the storage unit, and a first selection gate and a second selection gate which are arranged on two sides of the word line and the storage unit respectively, wherein the storage unit comprises a first storage part and a second storage part, the first storage part is close to the first selection gate, the second storage part is close to the second selection gate, and the storage unit is the nanometer crystal storage unit. In the split gate type flash memory, the storage area of single byte is reduced, and simultaneously the over-erasing problem is avoided.

Description

technical field [0001] The invention relates to the field of semiconductor design and manufacture, and in particular to a grid-divided flash memory sharing memory cells. Background technique [0002] Flash memory has become a research hotspot in non-volatile memory due to its convenience, high storage density, and good reliability. Since the first flash memory product came out in the 1980s, with the development of technology and the storage needs of various electronic products, flash memory has been widely used in mobile and communication devices such as mobile phones, notebooks, handheld computers and U disks. , flash memory is a kind of non-volatile memory. Its operating principle is to control the switch of the gate channel by changing the critical voltage of the transistor or memory cell to achieve the purpose of storing data, so that the data stored in the memory will not be lost due to power interruption. Disappears, and flash memory is a special structure of electric...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H01L29/423G11C16/02H10B69/00
Inventor 曹子贵
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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