Methods of programming non-volatile memory devices
A technology of non-volatile storage and programming method, which is applied in the field of semiconductor storage devices and can solve problems such as flash memory devices and EEPROM damage
Active Publication Date: 2015-01-21
SAMSUNG ELECTRONICS CO LTD
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
After performing a certain number of erase operations, all types of flash memory devices and EEPROMs can fail due to aging of the charge storage device used to store data and damage to the insulating layer arranged to surround the charge storage device
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0025] The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. However, this invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like reference numerals refer to like elements throughout.
[0026] Reference numerals are specified in the preferred embodiment of the invention and their examples are shown in the accompanying drawings. Wherever possible, the same reference numbers refer to the same or like elements throughout the specification and drawings.
[0027] Next, the features and functions of the present invention will be described by taking a nonvolatile memory device as an example. However, those skilled in the art ca...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
In a method of programming a non-volatile memory device, a first voltage is applied to a selected word line corresponding to a selected memory cell transistor of a selected transistor string to be programmed; a second voltage is applied to a neighboring word line neighboring the selected word line and corresponding to a neighboring transistor of the selected transistor string, wherein the first voltage is greater than the second voltage, the application of the first and second voltages to the selected and neighboring word lines respectively causing electrons to be generated by an electric field formed between the neighboring transistor and the selected memory cell transistor, the electrons accelerating toward the selected memory cell transistor and injecting into a charge storage layer of the selected memory cell transistor; wherein the neighboring transistor is positioned between the selected memory cell transistor and one of a ground select transistor and a string select transistor, and the first voltage is applied to unselected word lines corresponding to unselected memory cell transistors of the selected transistor string positioned between the selected memory cell transistor and the other of the ground select transistor and the string select transistor.
Description
[0001] This application claims priority from Korean Patent Application No. 10-2008-0112237 filed on November 12, 2008, the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates to a semiconductor memory device, and more particularly, to a programming method for a nonvolatile memory device. Background technique [0003] A flash memory (flash memory) device is a type of EEPROM that erases or programs multiple storage areas through one programming operation. A typical EEPROM only allows one area of memory to be erased or programmed at a time, which means that flash memory devices can operate more efficiently at higher speeds than other memory areas that can be read and written simultaneously by systems using flash memory devices . After performing a certain number of erase operations, all types of flash memory devices and EEPROMs can fail due to aging of the charge storage device used to store data and damage to...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10
CPCG11C11/5628G11C16/0483G11C16/3418G11C16/10G11C16/3427
Inventor 李载德郑舜文崔正达
Owner SAMSUNG ELECTRONICS CO LTD