Electron transporting-injection material and organic electroluminescent device using the same
An electron transport, organic light-emitting layer technology, applied in the field of OELD, can solve the problems of difficult to obtain high light-emitting efficiency, lower relative spectral sensitivity of images, etc.
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[0023] The electron transport-injection compound of the first embodiment of the present invention contains an asymmetric anthracene structure. In more detail, one side position of anthracene is substituted with an ammonium salt substituted with a substituted or unsubstituted aromatic group, a substituted or unsubstituted heterocyclic group, or a One of substituents or unsubstituted aliphatic groups, the other side of anthracene is substituted with substituted or unsubstituted aromatic groups, substituted or unsubstituted heterocycles A group or a substituted or unsubstituted aliphatic group. As a result, the organic electroluminescence diode including the electron transport-injection compound of the first embodiment of the present invention can have high luminous efficiency, low driving voltage, and long lifetime.
[0024] The electron transport-injection compound of the first embodiment of the present invention is represented by Formula 1 below.
[0025] [Formula 1]
[002...
Embodiment 1
[0068] The indium tin oxide (ITO) layer is patterned and cleaned on the substrate, so that the light emitting area of the ITO layer is 3mm*3mm. Put the substrate into the vacuum chamber and adjust the processing pressure to 1*10 -6 support. On the ITO layer, CuPC (approximately 650 angstroms) represented by the following formula 3-1 and 4,4'-bis[N-(1-naphthyl)-N-phenylamino represented by the following formula 3-2 are sequentially formed ]-biphenyl (NPD) (about 400 angstroms), a light-emitting layer (about 200 angstroms), an electron transport-injecting compound represented by A-01 in the above formula 2 (about 350 angstroms), lithium fluoride (LiF) (about 5 angstroms), and aluminum (Al) (about 1000 angstroms), whereby Manufacturing OELDs.
[0069] OELD produced 779cd / m at 0.9mA and 5.4V 2 brightness. At this time, the X index and Y index of the CIE chromaticity coordinates are 0.136 and 0.189, respectively.
Embodiment 2
[0071] The indium tin oxide (ITO) layer is patterned and cleaned on the substrate, so that the light emitting area of the ITO layer is 3mm*3mm. Put the substrate into the vacuum chamber and adjust the processing pressure to 1*10 -6 support. On the ITO layer, CuPC (approximately 650 angstroms) represented by the following formula 3-1 and 4,4'-bis[N-(1-naphthyl)-N-phenylamino represented by the following formula 3-2 are sequentially formed ]-biphenyl (NPD) (about 400 angstroms), a light-emitting layer (about 200 angstroms), an electron transport-injecting compound represented by A-10 in the above formula 2 (about 350 angstroms), potassium fluoride (LiF) (about 5 angstroms), and aluminum (Al) (about 1000 angstroms), whereby Manufacturing OELDs.
[0072] OELD produced 765cd / m at 0.9mA and 5.5V 2 brightness. At this time, the X index and Y index of the CIE chromaticity coordinates are 0.132 and 0.180, respectively.
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Abstract
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