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Plasma processing apparatus and plasma processing method

A plasma and processing device technology, applied in the field of plasma processing, can solve the problems of high resistance of metal wires, mechanical damage, etc.

Inactive Publication Date: 2011-01-19
EUGENE TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The second issue is the uniform thickness across the wafer
[0006] Among these issues, uniformity is an important issue related to the deposition process, non-uniform films lead to high resistance of metal lines and a high possibility of mechanical damage

Method used

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  • Plasma processing apparatus and plasma processing method
  • Plasma processing apparatus and plasma processing method
  • Plasma processing apparatus and plasma processing method

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Embodiment Construction

[0021] Exemplary embodiments of the present invention will now be described in more detail with reference to the accompanying drawings. It should be noted, however, that the present invention is not limited to these embodiments but may be implemented in various forms. These embodiments are given as examples in order for those skilled in the art to understand the present invention more fully. Therefore, in order to clearly illustrate the present invention, the drawings are not shown to exact scale.

[0022] Here, inductively coupled plasma (ICP) based plasma processing will be described as an example, however, the present invention is applicable to various plasma processing. In addition, the substrate will be described below as an example, however, the present invention can be applied to various objects.

[0023] figure 1 is a schematic diagram of a plasma processing apparatus according to an exemplary embodiment of the present invention.

[0024] The plasma processing appa...

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Abstract

A plasma processing apparatus includes a chamber providing an interior space where a process is performed upon a target; and a plasma generating unit generating an electric field in the interior space to generate plasma from a source gas supplied to the interior space. The plasma generating unit includes an upper source disposed substantially parallel to an upper surface of the chamber, an upper generator connected to the upper source to supply a first current to the upper source, a lateral source surrounding a lateral side of the chamber, and a lateral generator connected to the lateral source to supply a second current to the lateral source. The plasma generating unit further includes an upper matcher disposed between the upper generator and the upper source, and a lower matcher disposed between the lateral generator and the lateral source.

Description

technical field [0001] The present invention relates to a method and device for plasma treatment, and more particularly, to a method for treating an object with plasma in a chamber. Background technique [0002] A semiconductor device includes various layers on a silicon substrate on which the layers are deposited by a deposition process. In deposition processing, there are some key issues that are important in evaluating deposited films and selecting deposition methods. [0003] The first problem is multiple deposited films. This refers to composition, contamination level, defect density, and mechanical / electrical properties. The composition of the film varies according to the deposition conditions, which is important to achieve a specific composition. [0004] The second issue is uniform thickness across the wafer. Specifically, the film thickness deposited on non-planar patterns with steps is very important. The thickness uniformity of the deposited film is determine...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205
CPCH01J37/321H01L21/205
Inventor 禹相浩梁日光
Owner EUGENE TECH CO LTD