Device and method for analyzing static transient voltage drop

Abstract

The invention discloses a device for analyzing static transient voltage drop, which is applied to a multi-threshold complementary metal oxide semiconductor transistor. The device for analyzing static transient voltage drop comprises an estimating module, a processing module and a measuring module. The estimating module estimates a transient voltage drop tolerance value according to the characteristics of the transient voltage drop of the multi-threshold complementary metal oxide semiconductor transistor. The processing module, according to the transient voltage drop tolerance value, selects a corresponding simulated metal layer from a plurality of candidate simulated metal layers, and adds the simulated metal layer to the multi-threshold complementary metal oxide semiconductor transistor. The measuring module measures a transient voltage drop of the simulated metal layer added to the multi-threshold complementary metal oxide semiconductor transistor. The transient voltage drop resulting from the measurement is actually the static transient voltage drop of the multi-threshold complementary metal oxide semiconductor transistor.

Description

【Technical field】 [0001] The present invention is related to power gating technology, in particular, about a multi-threshold complementary metal-oxide semiconductor (Multi-Threshold Complementary Metal-Oxide Semiconductor) in a power gating circuit without using expensive special analysis tools. -Semiconductor, MTCMOS) transistor static transient voltage drop (static IR drop) measurement device and static transient voltage drop analysis method. 【Background technique】 [0002] As ASIC (Application Specific Integrated Circuit, ASIC) and System on Chip (SoC) gradually adopt the IC process below 0.13 micron, in order to produce smaller and faster IC, wafer generation Factories began to adopt new materials and process technologies, such as smaller process scale, adjustable threshold (scaled threshold) and unscaled voltage (unscaled voltage), etc., but more and more serious leakage currents (leakage current) and static power consumption (static power consumption) and other issues...

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Problems solved by technology

However, from Figure 2B It can be clearly seen that since the multi-threshold complementary metal oxide semiconductor transistor 20 achieves the effect of power gate control by separating the constant power supply voltage (constant VDD) and the switched power supply voltage (switched VDD), that is to say, the constant power supply voltage ( constant VDD) does not have any coupling relationship with the switched VDD, which makes it difficult to measure the static transient voltage drop of the multi-threshold complementary metal oxide semiconductor transistor 20

[0007] Although the current Electronic Design Automation (EDA) software can also analyze the static transient voltage drop of multi-threshold complementary metal oxide semiconductor transistors through some specially designed analysis software, the purchase cost is very considerable, even The spectrum can reach millions of Taiwan dollars, which is a very heavy burden for both IC designers and IC manufacturers

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