Method for making floating dynamic random access memory unit capable of increasing writing speed

Abstract

The invention discloses a method for making a floating dynamic random access memory unit capable of increasing the writing speed, which comprises a lightly doping and drain injecting technology and is characterized in that the lightly doping and drain injecting technology comprises the following steps of: masking an N trap region with photoresist, injecting a pentavalent element with a first measurement value into a P trap region firstly, and then injecting a trivalent element with a second measurement value into the P trap region; and masking the P trap region with photoresist, injecting the trivalent element with the first measurement value into the N trap region firstly, and then injecting the pentavalent element with the second measurement value into the N trap region, wherein the second measurement value is smaller than the first measurement value. In the lightly doping and drain injecting technology, with the adoption of a reverse injection method, impurity dispersing centers at a drain terminal are increased, and the impact ionization rate of a current carrier between the drain terminal and the impurity dispersing centers is increased, so that the substrate current of a floating effect memory unit is increased, and the writing speed of the floating effect memory unit is increased.

Description

technical field [0001] The invention relates to a manufacturing method of a dynamic random access memory (DRAM) unit, which is a dynamic random access memory (DRAM) unit utilizing the floating body effect (Floating Body Effect, FBE). A manufacturing method of a floating body dynamic random access memory unit with a writing speed. Background technique [0002] The development of embedded dynamic memory technology has made large-capacity DRAM very common in current system-on-chip (SOC). Large-capacity embedded dynamic memory (eDRAM) brings various benefits to SOCs, such as improved bandwidth and reduced power consumption, that can only be realized by using embedded technology. In addition to transistors, each memory cell of traditional embedded dynamic memory (eDRAM) also needs a deep trench capacitor structure. The deep trench of the capacitor makes the height of the memory cell much larger than its width, which makes the manufacturing process difficult. Its manufacturing p...

AI Technical Summary

Problems solved by technology

In addition to transistors, each storage unit of traditional embedded dynamic memory (eDRAM) also needs a deep trench capacitor structure. The deep trench of the capacitor makes the height of the storage unit much larger than its width, which makes the manufacturing process difficult

Its manufacturing process is very incompatible with CMOS VLSI process, which limits its application in embedded system chips

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