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Method for manufacturing floating body effect storage unit

A memory cell, floating body effect technology, applied in the manufacture of semiconductor/solid state devices, electrical components, circuits, etc., can solve the problems of hole accumulation, the inability to release the substrate current, etc., to improve the writing speed, enhance the impact ionization rate, The effect of increasing the substrate current

Inactive Publication Date: 2012-07-04
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology

Due to the existence of the oxygen buried layer, the substrate current cannot be released, so that the holes accumulate in the floating

Method used

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  • Method for manufacturing floating body effect storage unit
  • Method for manufacturing floating body effect storage unit

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preparation example Construction

[0018] The preparation method of the floating body effect memory unit provided by the present invention increases the method of reverse injection in the threshold voltage element injection process of the floating body effect memory unit preparation process, and enhances the carrier and the impurity scattering center in the device channel 3 The impact ionization rate between them increases the substrate current of the floating body effect memory cell and improves the writing speed of the floating body effect memory cell.

[0019] In addition, in the embodiment of the present invention, the element injected forward is the third group element, and the element injected backward is the fifth group element; or the element injected forward is the fifth group element, and the element injected backward is Group III elements. Among them, the Group III element is preferably boron, and the Group V element is preferably phosphorus.

[0020] In summary, the present invention has the advant...

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Abstract

The invention provides a method for manufacturing a floating body effect storage unit. The method comprises the following step of carrying out a threshold voltage element injection technique on a storage device unit, wherein the threshold voltage element injection technique comprises a positive injection and a negative injection, the number of charges obtained and lost on the outmost layer of a positively injected element is opposite to the number of charges obtained and lost on the outmost layer of a negatively injected element, and the positively injected element and the negative injected element are injected into a device channel of the floating body efficiency storage unit. According to the method for manufacturing the floating body effect storage unit, disclosed by the invention, on the premise of keeping a total injection amount changeless, collision ionization rate between a charge carrier and an impurity scattering center is reinforced so that substrate current and writing speed of the floating body effect storage unit are increased.

Description

technical field [0001] The invention belongs to the field of semiconductor preparation, and relates to a method for preparing a storage unit, in particular to a method for preparing a floating body effect storage unit which improves the writing speed of the floating body effect storage unit. Background technique [0002] The development of embedded dynamic memory technology has made large-capacity DRAM very common in current system-on-chip (SOC). Large-capacity embedded dynamic memory (eDRAM) brings various benefits to SOCs, such as improved bandwidth and reduced power consumption, that can only be realized by using embedded technology. In addition to the transistor, each storage unit of the traditional embedded dynamic memory needs a deep trench capacitor structure. The deep trench of the capacitor makes the height of the storage unit much larger than its width, which makes the manufacturing process difficult. Its manufacturing process is very incompatible with CMOS VLSI p...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/265
Inventor 俞柳江
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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