Unlock instant, AI-driven research and patent intelligence for your innovation.

High voltage MOS device and method for making the same

An oxide semiconductor, high voltage technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc.

Active Publication Date: 2014-08-27
MACRONIX INT CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, doing so is only valid for electrically separated

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High voltage MOS device and method for making the same
  • High voltage MOS device and method for making the same
  • High voltage MOS device and method for making the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0069] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0070] Some embodiments of the invention will be described more fully herein with reference to the accompanying drawings, but not all embodiments of the invention are shown. Indeed, various embodiments of the invention may be embodied in many different forms and should not be construed as limited to the embodiments herein. Rather, these embodiments are provided so that this disclosure will satisfy and adapt to legal requirements.

[0071] Some embodiments of the present invention may provide an NMOS structure for ultra-high voltage operation (eg, greater than 650 volts). Still further, some embodiments may provide a flow for fabricating isolation structures for high side operation. Some embodiments may also provide desi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a high-voltage metal oxide semiconductor device and a method for manufacturing the device. The high-voltage metal oxide semiconductor device includes a source, a drain, a gate, a drift region and a self-protection region, the gate is arranged close to the source, and the drift region is substantially arranged between the drain, the gate and the source Between one region, the self-protection region is set close to the drain. The high-voltage metal oxide semiconductor device provided by the present invention has the advantage of optimizing chip area efficiency and can be used for ultra-high voltage side operation.

Description

technical field [0001] The present invention relates to a semiconductor device, and in particular to an NMOS device with an isolation structure suitable for UHV operation. Background technique [0002] In recent years, there has been a trend toward downsizing of devices in almost all electronic device manufacturing. Smaller electronic devices are preferred over larger and bulkier electronic devices when the devices have substantially the same capacity. Therefore, having the technology to make smaller components can definitely motivate practitioners to produce smaller devices to accommodate these smaller components. However, many modern electronic devices need to perform both driving functions (such as switching devices) and data processing, or perform other judgment functions. Devices with these dual functions are not possible using low-voltage complementary metal-oxide-semiconductor (CMOS) technology. Therefore, high-voltage integrated circuits (HVIC) or power-integrated...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/78H01L21/336
CPCH01L29/0607H01L27/0922H01L29/0634H01L29/0878H01L29/404H01L29/66681H01L29/0696H01L29/7816H01L29/42368H01L27/0629H01L29/402H01L29/0886H01L29/1083H01L29/0882H01L29/1087
Inventor 陈建志林正基林镇元连士进吴锡垣
Owner MACRONIX INT CO LTD