Horizontal type silicon carbide high-temperature oxidation device

Abstract

The invention discloses a horizontal type silicon carbide high-temperature oxidation device. The device comprises a horizontally arranged double-layer quartz tube nested structure, which comprises an outer layer quartz tube and an inner layer quartz tube embedded in the outer layer. A horizontal annular cavity is formed between the outer layer quartz tube and the inner layer quartz tube; and two ends of the double-layer quartz tube nested structure are respectively fixedly assembled through a sealing structure, in order to isolate the outer layer quartz tube and the inner layer quartz tube. The device also comprises a radio frequency heating assembly, which comprises an insulation part, a heating part and a heating driving part. A gap is formed between the heating part and the outer wall of the inner layer quartz tube; the sealing structure is provided with a plurality of pores communicating with the annular cavity; two ends of the inner quartz tube are respectively provided with an air inlet component and an air outlet component; the air inlet component and the air outlet component are respectively provided with a second air inlet and a second air out that communicate with the cavity of the inner quartz tube. The present invention has advantages of simpleness, flexibility, multiple purposes, wide pressure regulating range, easy control, and high oxidation temperature, etc.

Description

Technical field: [0001] The invention relates to the technical field of high-temperature oxidation, in particular to a horizontal silicon carbide high-temperature oxidation device, which can not only realize dry oxygen or wet oxygen oxidation of silicon carbide materials, but also perform in-situ annealing in vacuum or other atmospheres. To meet the preparation requirements of silicon carbide power devices. Background technique: [0002] Silicon carbide (SiC) is an important wide-bandgap semiconductor material, which has great application potential in the fields of high-temperature, high-frequency and high-power devices. Compared with traditional silicon (Si) materials, SiC has obvious advantages, for example, its forbidden band width is 3 times that of Si, the saturation electron drift rate is 2.5 times that of Si, and the breakdown electric field is 10 times that of Si. In addition to the above advantages, SiC is the only compound semiconductor that can form its own oxide...

AI Technical Summary

Problems solved by technology

Obviously, the existing oxidation device can no longer meet the oxidation process requirements of SiC materials

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