Vertical silicon carbide high-temperature oxidation device

Abstract

The invention discloses a vertical silicon carbide high-temperature oxidation device comprising a double-layer quartz tube nesting structure and a radio-frequency heating assembly, wherein the double-layer quartz tube nesting structure comprises an outer-layer quartz tube and an inner-layer quartz tube inlaid in the outer-layer quartz tube; an annular cavity is formed between the inner-layer quartz tube and the outer-layer quartz tube and two ends of the double-layer quartz tube nesting structure are respectively and fixedly assembled through a seal structure to ensure that the inner-layer quartz tube and the outer-layer quartz tube are mutually isolated; the radio-frequency heating assembly comprises a heat preserving part, a heating part and a heating driving part; a gap is formed between the heating part and the inner-layer quartz tube; a plurality of air holes communicated with the annular cavity are arranged in the seal structure; and an air inlet end part and an air outlet end part are closely arranged at two ends of the inner-layer quartz tube and respectively provided with a second air inlet and a second air outlet which are communicated with the inner cavity of the inner-layer quartz tube. The vertical silicon carbide high-temperature oxidation device disclosed by the invention has the advantages of simpleness, flexibility, versatility, wide pressure regulating range, easiness in control, higher oxidizing temperature and the like.

Description

Technical field: [0001] The invention relates to the technical field of high-temperature oxidation, in particular to a vertical silicon carbide high-temperature oxidation device, which can not only realize dry oxygen or wet oxygen oxidation of silicon carbide materials, but also perform in-situ annealing under vacuum or other atmospheres. To meet the preparation requirements of silicon carbide power devices. Background technique: [0002] Silicon carbide (SiC) is an important wide-bandgap semiconductor material, which has great application potential in the fields of high-temperature, high-frequency and high-power devices. Compared with traditional silicon (Si) materials, SiC has obvious advantages, for example, its forbidden band width is 3 times that of Si, the saturation electron drift rate is 2.5 times that of Si, and the breakdown electric field is 10 times that of Si. In addition to the above advantages, SiC is the only compound semiconductor that can form its own oxid...

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Problems solved by technology

Obviously, the existing oxidation device can no longer meet the oxidation process requirements of SiC materials

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