Semiconductor substrate, semiconductor device, and manufacturing methods thereof

Abstract

Exemplary embodiments of the present invention provide a method of fabricating a semiconductor substrate, the method including forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, etching the substrate using a solution to remove the metallic material layer and a portion of the first semiconductor layer, and forming a cavity in the first semiconductor layer under where the metallic material layer was removed.

Description

technical field [0001] Exemplary embodiments of the present invention relate to semiconductor substrates, semiconductor devices and methods of manufacturing the same. More particularly, exemplary embodiments of the present invention relate to a semiconductor substrate having a GaN layer formed on the substrate, a semiconductor device, and a method of manufacturing the same. Background technique [0002] Light emitting diodes (LEDs) including gallium nitride (GaN) based semiconductors may be used in various applications such as for signaling devices, backlight units of liquid crystal panels, and the like. It is known that the luminous efficiency of LEDs is affected by dislocation density and crystal defects. Although GaN-based semiconductor crystals can be grown on heterogeneous substrates (e.g., sapphire, etc.), lattice mismatch and thermal expansion differences between the GaN layer and the substrate occur, resulting in high dislocation density or increased defect density....

AI Technical Summary

Problems solved by technology

However, the high dissociation rate of nitrogen in GaN hinders the formation of GaN melt, thus making it difficult to form a GaN substrate

While mechanical polishing, laser delamination, etc. can be used to separate the GaN substrate from the GaN bulk crystal

Images