Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for making holes using a fluid jet

一种流体、区域的技术,应用在半导体/固态器件制造、金属加工、电气元件等方向,能够解决叠层质量有害等问题

Inactive Publication Date: 2012-11-14
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This flange is detrimental to the quality of the stack

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for making holes using a fluid jet
  • Method for making holes using a fluid jet
  • Method for making holes using a fluid jet

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] figure 1 A first step of the method for opening holes in a layer made of a dielectric material is shown. The first adhesive area 1 a and the second adhesive area 1 b are formed on the surface of the support 2 . The support 2 may be a substrate, the surface of which includes a plurality of first and second adhesion regions 1a and 1b. For example in figure 1 Among them, the support member 2 includes two adhesive regions 1a and three adhesive regions 1b.

[0016] The support 2 is preferably a flexible substrate. The support 2 may be made of plastic, such as polyethylene naphthalate (PEN) or polyethylene terephthalate (PET). The support 2 can also be made of thin silicon, metal such as flexible steel or stainless steel, or plastic covered with metal. The metal used to cover the substrate can be aluminum or gold.

[0017] Preferably, the first and second adhesive regions 1a and 1b are formed by locally depositing an adhesive in the form of a thin layer. The adhesive c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The method for making a hole (5) in a layer (4) comprises the provision of first and second adhesion areas (1a) and (1b) on a surface of a substrate (2). The first area (1a) has dimensions corresponding to the dimensions of the hole (5). The method comprises depositing a layer (4) on the first and second areas (1a) and (1b). The material of the layer (4) has an adhesion coefficient to the first area (1a) lower than the adhesion coefficient to the second area (1b). The part of the layer arranged above the first area (1a) is eliminated by a fluid jet (6).

Description

technical field [0001] The invention relates to a method for opening holes in a layer. In particular, the invention relates to the fabrication of interconnect vias in devices made of organic materials. Background technique [0002] Continuing improvements in the performance of integrated circuits, such as in terms of power consumption and / or operating frequency, have necessarily resulted in continued reductions in the size of integrated circuit components. The portion and pitch of the metal traces used to interconnect these components are also reduced, which involves increasing the propagation delay of the signal. [0003] Typically, interconnections are made by depositing a conductive layer and then photolithographically etching the conductive layer. This technique is widely used in the case of single-layer circuits, such as those with metal traces of aluminum. In the case of multi-layer circuits, this technique is not suitable and damascene metallization is preferred, w...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B26F1/26H01L21/768
CPCH05K2203/0522H05K2203/0746H05K3/0044H05K2201/0239B26F1/26H01L21/768
Inventor M.本瓦蒂M.海兹曼
Owner COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES