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Test method for reliability of oxide dielectric layer insulation breakdown over time

A technology of insulation breakdown and test method over time, which is applied in the direction of testing dielectric strength, semiconductor/solid-state device testing/measurement, etc., to achieve the effect of more accurate time evaluation and fast time evaluation

Active Publication Date: 2017-04-05
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] But the test of JEDEC / FSA (JP-001) is simply to test the withstand voltage capability of the insulating layer over time

Method used

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  • Test method for reliability of oxide dielectric layer insulation breakdown over time
  • Test method for reliability of oxide dielectric layer insulation breakdown over time
  • Test method for reliability of oxide dielectric layer insulation breakdown over time

Examples

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no. 1 example

[0029] figure 1 A schematic diagram of a method for testing the reliability of an oxide dielectric layer over time for insulation breakdown according to the first embodiment of the present invention is schematically shown.

[0030] like figure 1 As shown, the method for testing the reliability of the oxide dielectric layer over time for insulation breakdown according to the first embodiment of the present invention includes:

[0031] During the first test period T11, the first acceleration voltage V1 is applied to the test structure, and the first leakage current monitoring value C1 of the oxide medium is tested at the same time;

[0032] During the first injection period T21 after the first test period T11, no stress acceleration voltage is applied to the test structure, but a stress acceleration current is injected into the oxide dielectric layer to be tested;

[0033] During the second test period T12 after the first injection period T21, the second stress acceleration vo...

no. 2 example

[0047] figure 2 A schematic diagram of a method for testing the reliability of an oxide dielectric layer over time for insulation breakdown according to the second embodiment of the present invention is schematically shown.

[0048] like figure 2 As shown, it shows that the acceleration voltages of the respective test periods (the first test period T11, the second test period T12, the third test period T13 and the fourth test period T14) are constant and equal.

[0049] That is, for the second embodiment, the following relationship exists:

[0050] First acceleration voltage V1=second acceleration voltage V2=third acceleration voltage V3=third acceleration voltage V4.

no. 3 example

[0052] image 3 A schematic diagram of a method for testing the reliability of an oxide dielectric layer over time for insulation breakdown according to the third embodiment of the present invention is schematically shown.

[0053] like image 3 As shown in FIG. 2 , it shows that the acceleration voltage of each test period (the first test period T11, the second test period T12, the third test period T13 and the fourth test period T14) gradually increases in the respective test periods.

[0054]

[0055] Although the above-mentioned embodiments all show that the whole test includes four test periods (the first test period T11, the second test period T12, the third test period T13 and the fourth test period T14) and three injection periods (the first injection period T21, the second injection period T22 and the third injection period T23), but for any person skilled in the art, it can be understood that the number of test periods and the number of injection periods included ...

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Abstract

The invention provides a method for testing the reliability of time-dependent dielectric breakdown of an oxide medium layer. The method comprises the following steps of: during a plurality of testing periods, supplying stress acceleration voltage to a tested structure, and testing a leakage current monitoring value of an oxide medium; and during a plurality of injection periods, not supplying the stress acceleration voltage to the tested structure, but injecting stress acceleration current to an oxide medium layer to be tested, wherein the testing periods and the injection periods are mutually staggered. The stress acceleration voltage applied to the tested structure during the testing periods is kept constant during the respective testing periods; and the stress acceleration voltage applied to the tested structure in the last testing period is less than the stress acceleration voltage applied to the tested structure in the next testing period. The invention provides the more precise method for testing the reliability of the time-dependent dielectric breakdown of the oxide medium layer.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, more specifically, the invention relates to a method for testing the reliability of an oxide dielectric layer over time for insulation breakdown. Background technique [0002] After long-term research, it has been found that TDDB (time dependent dielectric breakdown, also known as time-dependent dielectric breakdown, time-dependent dielectric breakdown, and time-dependent dielectric breakdown) is the failure of the gate oxide layer of VLSI MOS devices. main mechanism. [0003] Time-dependent insulation breakdown TDDB reliability test is an important method to evaluate the quality of the thin gate oxide layer of MOS transistors. Specifically, the time-dependent insulation breakdown TDDB reliability test refers to: add a constant voltage on the gate to make the device in an accumulation state; after a period of time, the oxide film (oxide layer) will break down (generally, The state when t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66G01R31/12
Inventor 张博
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP