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Flash memory device and its management method, data reading and writing method and reading and writing device

A data writing and device technology, applied in the direction of memory address/allocation/relocation, etc., can solve the problem of slow writing speed, and achieve the effect of improving data writing speed and reducing data moving operations.

Active Publication Date: 2016-03-02
SHENZHEN NETCOM ELECTRONICS CO LTD
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  • Description
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AI Technical Summary

Problems solved by technology

[0005] Based on this, it is necessary to provide a management method of a flash memory device that can improve data writing efficiency in view of the slow writing speed of existing flash memory devices when performing data write operations

Method used

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  • Flash memory device and its management method, data reading and writing method and reading and writing device
  • Flash memory device and its management method, data reading and writing method and reading and writing device
  • Flash memory device and its management method, data reading and writing method and reading and writing device

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Embodiment Construction

[0070] The technical solution of the flash memory device and its management method, data reading and writing method and device will be described in detail below in combination with specific embodiments and accompanying drawings, so as to make it more clear.

[0071] Such as figure 2 As shown, a method for managing a flash memory device includes the following steps:

[0072] In step S110, a block mapping table of logical blocks and physical blocks is established, and the corresponding relationship between logical blocks and physical blocks is recorded in the block mapping table.

[0073] Specifically, each logical block may correspond to multiple physical blocks. The physical block is an old block (old block), sequence block (sequence block) or temporary block (temp block). The old block is a block storing old data; the sequence block is the current sequence A block for writing data; a temporary block is a block for temporarily storing data.

[0074] Step S120, calculating a...

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Abstract

The invention relates to a flash memory device, and a management method, a data read-write method and a data read-write device thereof. The management method of the flash memory device includes the steps of creating a block mapping table for logical blocks and physical blocks, which records corresponding relation between the logical bocks and the physical blocks; calculating and recording page offset according to an initial logical address and write-in length in a first write command; adding 1 to the number of logical pages in the logical blocks, calculating the number of sectors occupied by the first logical page and the last logical page in the logical blocks according to the page offset, and modifying page mapping tables in the logical blocks and the physical blocks, which record the corresponding relation between the logical page and the physical page in one logical block. During the use of the management method of the flash memory device, the page mapping tables in the logical blocks and the physical blocks are modified, so that frequent data transits due to unevenness of flash memory pages during subsequent data write-in can be reduced effectively, and the data write-in efficiency of the flash memory device is improved.

Description

technical field [0001] The invention relates to a storage device, in particular to a flash memory device and its management method, a data reading and writing method and a reading and writing device. Background technique [0002] Flash memory devices are more and more widely used in daily life. The write speed of flash memory devices has become an important indicator to measure the performance of flash memory devices. Improving the write speed of flash memory devices will greatly improve data processing efficiency and help expand the application of flash memory devices. [0003] The physical composition of flash memory is as follows: each package contains one or more dies; each die contains multiple blocks; each block contains multiple pages; each page is generally divided into one or more sectors. A block is the smallest unit of erasing in flash memory, and a page is the smallest unit of writing. Physically, flash memory is managed in units of pages, while logically it is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/02
Inventor 郭丹
Owner SHENZHEN NETCOM ELECTRONICS CO LTD
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