Method and device for data management in flash storage device

A flash memory storage and data management technology, applied in the data storage field of memory, can solve the problems affecting the data reading and writing speed of flash memory storage devices, and achieve the effect of improving overall performance, improving data writing speed, and strong practicability

Active Publication Date: 2016-01-27
SHENZHEN NETCOM ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the prior art, a single flash storage device often uses both SLC and MLC or only MLC to increase the storage capacity of the flash storage device, which will affect the data read and write speed of the flash storage device to a certain extent

Method used

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  • Method and device for data management in flash storage device
  • Method and device for data management in flash storage device
  • Method and device for data management in flash storage device

Examples

Experimental program
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Embodiment 1

[0023] figure 1 A schematic diagram of a system scenario to which the data management method in a flash storage device provided in Embodiment 1 of the present invention is shown is shown. For convenience of description, only parts related to this embodiment are shown.

[0024] Such as figure 1 As shown, the system includes a host system 1 and a flash storage device 2 .

[0025] Wherein, the host system 1 is a computer system, including a microprocessor 11 , a random access memory (RAM) 12 , a data transmission interface 13 and an input or output device 14 . The flash storage device 2 is a flash storage device that includes a fast data writing area, and the fast data writing area is the storage space provided by the least significant bit page in the multi-level unit flash memory in the flash storage device 2 and / or a single layer The storage space provided by the flash page of the cell.

[0026] The host system 1 is connected to the flash storage device 2 through the data tr...

Embodiment 2

[0031] figure 2 It shows the implementation process of the data management method in the flash memory storage device provided by Embodiment 1 of the present invention, and the execution subject of the method is figure 1 The flash storage device 2 in the shown system, the method process is described in detail as follows:

[0032] In step S101, a portion of the total storage space provided by all least significant bit pages and / or all single-level unit flash memory pages in the flash storage device is divided into a fast data writing area.

[0033] In this embodiment, the fast data writing area is the storage space provided by the least significant bit page in the multi-level cell flash memory and / or the storage space provided by the single-level cell flash memory page, and the fast data writing area The storage space is less than the total storage space provided by all LSB pages and all single-level cell flash pages in multi-level cell flash memory. For example, the flash st...

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Abstract

The invention is applied to the technical field of data storage of a storage and provides a method and a device for managing data in flash memory equipment. The flash memory equipment comprises at least one multi-layer unit flash memory. The method comprises the following steps of dividing a part of area from a total storage space provided by all the lowest effective bit pages and / or all the single-layer unit flash memory pages in the multi-layer unit flash memory to serve as a quick data writing area; receiving a writing command transmitted by a host system, wherein the writing command comprises data to be written and a writing address of the data to be written; and writing the data to be written into the quick data writing area. By the device and the method, the data writing speed of the multi-layer unit flash memory equipment can be effectively increased, and the whole property of the flash memory equipment is improved.

Description

technical field [0001] The invention belongs to the technical field of data storage of memory, and in particular relates to a method and device for data management in a flash memory storage device. Background technique [0002] Flash memory can be divided into single-level cell flash memory (Single-LevelCell, SLC) and multi-level cell flash memory (Multi-LevelCell, MLC) according to its internal structure. Each cell (cell) of SLC stores 1 bit (bit) of information; each cell (cell) of MLC stores at least 2 bits (bit) of information, where MLC includes 2bit / cell, 3bit / cell, 4bit / cell and more flash memory. [0003] The data writing of SLC is by applying a voltage to the charge of the floating gate, and eliminating the stored charge through the source, in this way, to store an information bit (1 means erasing, 0 means writing). MLC uses different degrees of charge in the floating gate, so it can store multiple bits of information in a single transistor, and through the contro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/02
Inventor 邓恩华尹慧
Owner SHENZHEN NETCOM ELECTRONICS CO LTD
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