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Acoustic wave filter

A technology of acoustic wave filters and resonators, applied in electrical components, impedance networks, etc., can solve problems such as increased resonant frequency variability, increased film thickness dependence, and difficulty in obtaining wide bandwidth filters

Inactive Publication Date: 2013-02-06
TAIYO YUDEN KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, since trying to increase TCF, K 2 eff decreases and the fractional bandwidth becomes smaller, so there is a problem that it is difficult to obtain a wide bandwidth filter
On the other hand, if you try to forcibly widen the bandwidth, there is a problem that the matching of the filter deteriorates
[0005] In addition, in the conventional acoustic wave filter, there is a problem that the dependence of the resonance frequency on the film thickness increases due to the insertion of the temperature compensation film in the piezoelectric film compared to the case where the temperature compensation film is formed in the surface layer and increased variability in resonant frequency

Method used

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no. 1 approach

[0046] Figure 7 A to C among them are schematic diagrams illustrating the structure of the piezoelectric thin film resonator in the acoustic wave filter according to the first embodiment, and are respectively compared with those of the comparative example. Figure 2A to Figure 2C Corresponding. The structure of the piezoelectric thin film resonator according to the first embodiment is substantially the same as that in the comparative example, except that a frequency control channel is formed in the resonance region 40 between the upper electrode 18 and the frequency adjustment film 20 . The mass-loading membrane (hereinafter referred to as the second mass-loading membrane 24 ). The second mass load film 24 is used to make the resonance frequencies of the respective resonators constituting the acoustic wave filter have different values ​​(as described below). In the acoustic wave filters (filters A, B, and G) according to the comparative example, the second mass load film 24...

no. 2 approach

[0059] The second embodiment is an embodiment in which the structure of the ladder-type filter is changed.

[0060] Figure 11 is a circuit diagram illustrating the configuration of the acoustic wave filter (filter D) according to the second embodiment. The circuit configuration of the acoustic wave filter according to the second embodiment is the same as that of the acoustic wave filter according to the first embodiment ( figure 1 ), except for the inductors L1 and L2, an inductor L3 with one end grounded is connected between the input terminal In and the series resonator S4. The structure of the piezoelectric thin film resonator constituting the ladder filter is the same as that of the first embodiment ( Figure 7 and 16 f03788-b70c-4a96-9767-2538e897fa32). The resonant frequency of the resonator is at Figure 5 The Filter D column is shown.

[0061] Figure 12A to Figure 12C is a graph illustrating a comparison of band pass characteristics between the acoustic wave f...

no. 3 approach

[0066] The third embodiment is an embodiment using a piezoelectric thin film resonator with improved piezoelectricity of the piezoelectric film.

[0067] The circuit configuration of the acoustic wave filter (filters E, F) according to the third embodiment is the same as that of the acoustic wave filter ( Figure 11 ) The circuit configuration is the same, and the structure of the piezoelectric thin film resonator constituting the ladder filter is the same as that of the first and second embodiments ( Figure 7 , Figure 8A to Figure 8C ) of the same. The difference from the first and second embodiments is that, to the piezoelectric films (the first piezoelectric film 14 a and the second piezoelectric film 14 b ) of the piezoelectric thin film resonator is added to increase the piezoelectric constant ( e33 ). element. For example, alkaline earth metals (scandium (Sc) and the like), rare earth metals (erbium (Er) and the like) can be used as elements for increasing the piezo...

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Abstract

An acoustic wave filter including piezoelectric thin film resonators, in which at least two of the piezoelectric thin film resonators including: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode located across at least a part of the piezoelectric film; a mass load film for a frequency control located in a resonance region where the lower electrode and the upper electrode face each other, and having a shape different from that of the resonance region; and a temperature compensation film having a temperature coefficient of an elastic constant opposite in sign to that of the piezoelectric film, at least a part of the temperature compensation film being located between the lower electrode and the upper electrode in the resonance region, and areas of mass load films of said at least two of the piezoelectric thin film resonators are different from each other.

Description

technical field [0001] Some aspects of the invention relate to an acoustic wave filter. Background technique [0002] A BAW filter using Bulk Acoustic Wave (BAW) is known as a filter for wireless devices such as mobile phones. The BAW filter is composed of piezoelectric thin film resonators, and each piezoelectric thin film resonator has a structure in which an upper electrode and a lower electrode face each other across a piezoelectric film. The resonance frequency of the piezoelectric thin film resonator is determined by the constituent materials and film thickness of the region where the upper and lower electrodes face each other (hereinafter referred to as the resonance region). [0003] In order to make the resonance frequencies of piezoelectric thin film resonators have different values, a technique for forming a mass load film in a resonance region is known, for example, in Japanese Patent Laid-Open No. 2002-335141, Japanese Patent Laid-Open No. Table (Translation o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/64
CPCH03H9/64H03H9/02102H03H2003/0471H03H9/605H03H9/173H03H9/706H03H9/583H03H9/175H03H9/131H03H9/542H03H9/585H03H9/0095
Inventor 西原时弘谷口真司上田政则
Owner TAIYO YUDEN KK