Method for pre-screening direct-current steady state power aging in GaN-based devices
A steady-state power, pre-screening technology, applied in the direction of single semiconductor device testing, instruments, scientific instruments, etc., can solve problems such as overstress failure, failure to achieve screening effect, etc., to achieve the effect of improving stability
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[0057] The method for pre-screening the DC steady-state power aging of GaN-based devices provided in this embodiment is to perform micro-infrared measurement on AlGaN / GaN HEMTs to determine the DC steady-state power aging conditions of the devices, and under these conditions the devices are For DC steady-state power aging, the computer software is used to collect real-time changes in the characteristic parameters of the device over time, and obtain the change curve of each characteristic parameter of the device over time. Determine the time when the device characteristic parameters tend to be stable is the threshold time for the device to enter the stable period. Within this time range, pre-screen the device to eliminate the device whose parameters are difficult to stabilize. At the same time, the device has achieved the function of stabilizing parameters after aging. It is an effective and feasible method for performing DC steady-state power aging of GaN-based devices and real...
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