Method for pre-screening direct-current steady state power aging in GaN-based devices

Abstract

The invention discloses a method for pre-screening direct-current steady state power aging in GaN-based devices. The method includes: subjecting a GaN-based device to be tested to package testing so as to determine direct-current steady state power of the GaN-based device; measuring junction temperature of the device by an infrared microscopic thermographer, subjecting the measured junction temperature to mathematical fitting to obtain relation of the tested GaN-based device between peak junction temperature and the direct-current steady state power, and determining conditions for direct-current steady state power aging of the tested GaN-based device; subjecting the tested GaN-based device to direct-current steady state power aging to obtain time-based changing curves of characteristic parameters of the tested GaN-based device; determining level-off threshold time of the characteristic parameters of the device according to the time-based changing curves of the characteristic parameters of the GaN-based device, and determining the time of the device for direct-current steady state power aging; subjecting the tested GaN-based devices to aging screening to remove the devices with the characteristic parameters less easily stabilizing in the threshold time, and completing pre-screening of direct-current steady state power aging in the GaN-based devices.

Description

technical field [0001] The invention relates to the technical field of DC steady-state power aging, in particular to a method for pre-screening the DC steady-state power aging of GaN-based devices. Background technique [0002] Steady-state power aging is to continuously apply a certain electrical stress to the device for a long period of time, and accelerate various physical and chemical processes inside the device through the comprehensive action of electricity and heat, so as to promote the early exposure of various potential defects inside the device, so as to achieve the elimination purpose of early failure devices. It has a good screening effect on a series of defects that may exist in the process, such as surface contamination, channel leakage, chip cracks, and oxide layer defects. [0003] The reliability of semiconductor devices is usually represented by an idealized curve of the bathtub curve, which consists of 3 regions. In the first region, the failure rate dec...

AI Technical Summary

Problems solved by technology

[0004] The most critical issue in screening GaN-based power devices using the electrical power aging method is to determine the stress conditions for steady-state power aging screening of devices. If the stress conditions are too low, the screening effect will not be achieved, and if the stress conditions are too high, the temperature may exceed the maximum allowable junction temperature. resulting in overstress failure

Images