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Low noise amplifier for current reuse and noise cancellation

A low-noise amplifier and current multiplexing technology, which is applied in the direction of improving the amplifier to reduce the impact of noise, can solve the problems of waste and DC bias current increase, and achieve the effects of low power consumption, optimized noise figure, and high current utilization efficiency

Inactive Publication Date: 2013-03-13
SOUTHEAST UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The high gain is generally at the cost of DC current or power consumption. Therefore, this compromise leads to an increase in the DC bias current of the two branches.
In a resistive load configuration, the voltage drop generated by the large bias current is added to the load resistance and is therefore wasted

Method used

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Embodiment Construction

[0014] The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0015] Such as figure 1 As shown, a current multiplexing noise canceling low noise amplifier of the present invention includes a common-source amplifier, a common-gate amplifier, a signal isolation and current multiplexing network, and an off-chip receiving network; wherein the common-source amplifier includes the first An N-type metal oxide transistor N 1 , the first resistor R 1 , the third resistor R 3 , the first capacitance C 1 and the sixth capacitor C 6 ; The common gate stage amplifier includes a second N-type metal oxide transistor N 2 , the second resistance R 2 , the second capacitance C 2 and the fifth capacitor C 5 ; The signal isolation and current multiplexing network consists of a first inductor L 1 and the third capacitor C 3 constituted by the first resonant network, and by the second inductor L 2 and the fourth ...

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PUM

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Abstract

The invention discloses a low noise amplifier for current reuse and noise cancellation. The amplifier comprises a common-source amplifier, a common-gate amplifier, a signal isolation and current reuse network and an off-chip receiving network, wherein the common-source amplifier comprises a first N-type metal oxide transistor, a first resistor, a third resistor, a first capacitor and a sixth capacitor; the common-gate amplifier comprises a second N-type metal oxide transistor, a second resistor, a second capacitor and a fifth capacitor; the signal isolation and current reuse network comprises a first resonant network and a second resonant network; the first resonant network consists of a first inductor and a third capacitor; the second resonant network consists of a second inductor and a fourth capacitor; and the off-chip receiving network comprises a second inductor, a signal source of an artificial antenna and an antenna internal resistor. The low noise amplifier in such a structure has a noise cancellation function and simultaneously reuses the static bias current of the common-gate amplifier and the common-source amplifier, thereby having a low noise coefficient and a low power consumption function.

Description

technical field [0001] The invention relates to an amplifier, in particular to a current multiplexing noise canceling low noise amplifier. Background technique [0002] In the RF signal receiving chain, the low-noise amplifier is the first-stage active circuit of the receiver, which itself has a very low noise figure and provides sufficient gain. Considering the entire receiving chain, the low noise amplifier should have a higher gain to suppress the influence of the noise of the subsequent RF circuit and the intermediate frequency circuit on the noise figure of the entire receiving chain. In addition, the low noise amplifier itself should have a low noise figure to reduce the design pressure of the mixer. As multi-carrier technology and complex modulation technology are more and more applied to wireless communication, the requirements for various performance parameters of the receiver are gradually increasing. Due to the limitation of the cut-off frequency of MOS transist...

Claims

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Application Information

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IPC IPC(8): H03F1/26
Inventor 吴建辉杨仲盼李红陈超白春风刘智林尹海峰徐哲
Owner SOUTHEAST UNIV
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