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A method for checking the clogging of sat vaporization valve

A technology of vaporization valves and test pieces, which is applied in the direction of measuring devices, material analysis through electromagnetic means, instruments, etc., can solve the problems of excess, high cost, and long time consumption

Active Publication Date: 2016-02-10
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the inside of the gasification valve is unblocked, the BP concentration in the produced BPSG film layer is evenly distributed at different depths; when the inside of the gasification valve is blocked, the gasification capacity will be abnormal in the initial stage of the reaction, resulting in two consequences, namely, the initial stage of the reaction Insufficient or excessive doping of BP causes the initial concentration of the film to be significantly lower or higher, which results in BP precipitation in the entire BPSG film layer or peeling of the BPSG film layer, resulting in failure of the insulating layer
[0004] The traditional method uses SIMS (Secondary Ion Mass Spectrometry) analysis of the BPSG film to analyze whether the distribution of BP concentration will be significantly lower or higher in the early stage of film formation to determine whether the vaporization valve is blocked, but this method Time-consuming and expensive

Method used

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  • A method for checking the clogging of sat vaporization valve
  • A method for checking the clogging of sat vaporization valve
  • A method for checking the clogging of sat vaporization valve

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Embodiment Construction

[0024] Such as figure 1 Shown, inspection method of the present invention, in process parameter: temperature: 480 DEG C; Pressure: 200 torr; Gas: helium: 6000 milliliters / minute, ozone: 4000 milliliters / minute, TEOS (diethyl orthosilicate): 600 mg / min, TEB (triethylboronic acid): 100 mg / min, TEPO (triethyl phosphate): 50 mg / min, including the following steps:

[0025] (1) if figure 2 As shown, through one film formation and a growth time of 100 seconds, borophosphosilicate glass test piece 1 was produced;

[0026] (2) if Figure 4 As shown, through five times of film formation, each film formation time is 20 seconds, and a borophosphosilicate glass test piece 2 having the same thickness as the test piece 1 is produced;

[0027] (3) measure the boron phosphorus concentration of test piece one and test piece two with concentration tester XRF3640;

[0028] (4) compare the boron phosphorus concentration in test piece one and test piece two;

[0029] When the boron concentrat...

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Abstract

The invention discloses a method for checking SAT (sub-atmospheric pressure chemical vapor deposition equipment) vaporization valve blockage. Make a borophosphosilicate glass optical sheet with the same thickness as the test sheet 1 for several times, as the test sheet 2; measure the concentration of boron and phosphorus on the test sheet 1 and the test sheet 2; compare the boron and phosphorus in the test sheet 1 and the test sheet 2 Concentration; when the difference of boron concentration is greater than or equal to 0.4mol%, and the difference of phosphorus concentration is greater than or equal to 0.2mol%, it is determined that the vaporization valve is blocked; when the difference of boron concentration is less than 0.4mol%, and the difference of phosphorus concentration is less than 0.2mol%, it is determined that the vaporization valve is unblocked. The method for checking the blockage of the SAT vaporization valve of the present invention can quickly detect whether the BPSG film formation has abnormal concentration, and can accurately judge whether the vaporization valve is blocked.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for checking the clogging of a vaporization valve of a SAT (subatmospheric chemical vapor deposition equipment). Background technique [0002] BPSG (Borophosphosilicate Glass) is an insulating layer used in integrated circuits before the metal of the product. Since silicon dioxide is doped with B (boron) elements and P (phosphorus) elements, it has better planarity itself or forms a planarization process with CMP (chemical mechanical polishing equipment), which can remove impurities (Na+) for adsorption. [0003] The gasification valve is a component that vaporizes the liquid source boron source and phosphorus source into gas, and then participates in the chemical reaction to generate BPSG. When the inside of the gasification valve is unblocked, the BP concentration in the produced BPSG film layer is evenly distributed at different depths; when the insid...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/62
Inventor 程望阳严玮周俊
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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