A kind of array substrate and its preparation method, and liquid crystal display device

Abstract

The present invention provides an array substrate, the method for manufacturing the same, and a liquid crystal display device, wherein the array substrate comprises: a gate electrode, a gate insulating layer, a barrier layer pattern and an active semiconductor layer pattern formed by metal oxide semiconductor which are located on the gate insulating layer, a semiconductor protecting layer which covers the barrier layer pattern and the active semiconductor layer pattern, and has via holes at positions corresponding to the barrier layer pattern and the active semiconductor layer pattern; a data wire, a source electrode and a drain electrode formed by metal Cu, which are located at via holes. Metal Cu is used to form the data wire, the source electrode and the drain electrode, and the metal oxide semiconductor is used as the barrier layer for the metal Cu, and as a result, the diffusion of metal Cu into the layers such as the gate insulating layer etc., is prevented in the manufacturing process of TFT.

Description

technical field [0001] The invention relates to liquid crystal display technology, in particular to an array substrate, a preparation method thereof, and a liquid crystal display device. Background technique [0002] Thin Film Transistor Liquid Crystal Display (TFT-LCD, Thin Film Transistor Liquid Crystal Display) has the characteristics of small size, low power consumption, and no radiation. With the continuous increase of TFT-LCD size and resolution, higher frequency driving circuits are used to improve display quality, resulting in more serious delay of image signals of large-size, high-resolution TFT-LCDs. The delay of the TFT-LCD signal is mainly determined by T=RC, R is the signal resistance, and C is the relevant capacitance. At present, Ta, Cr, Mo and other metals with stable chemical properties and high resistivity or their alloys are generally used as metal electrode materials to make gates, gate scan lines and data lines of TFT-LCD. As the size and resolution of...

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Problems solved by technology

[0005] The prior art has the following problems: when using amorphous IGZO to make TFTs, a barrier layer is generally placed on the amorphous IGZO (semiconductor layer) to avoid destroying the amorphous IGZO when forming the source and drain electrodes of metal Cu, but this will increase the patterning time once. process, and when wet etching metal Cu, since the etching rate of metal Cu is very different from that of the barrier layer, a part of the barrier layer will remain after etching, and other thin films deposited on it will appear covered poor sex

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