Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and method of manufacturing the same

A technology for semiconductors and devices, applied in the field of semiconductor devices and their manufacturing, can solve the problems of manufacturing switches and increasing the size of switches

Inactive Publication Date: 2013-06-26
SAMSUNG ELECTRO MECHANICS CO LTD
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] Therefore, the gate-source capacitance part of the switch needs to be increased, which leads to an increase in the volume of the switch
However, it may be difficult to fabricate a desired number of switches on a semiconductor substrate with a limited area

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] Hereinafter, the embodiments will be described in detail with reference to the accompanying drawings so that they can be easily implemented by those skilled in the art to which the present invention relates.

[0037] However, in order not to unnecessarily obscure the subject matter of the present invention, detailed descriptions related to well-known functions or configurations will be omitted.

[0038] In addition, similar reference numerals in all the drawings will be used to describe elements having the same or similar functions.

[0039] It should be understood that throughout this specification, when an element is referred to as being "connected to" another element, it may be directly connected to the other element, or may be indirectly connected to the other element through one or more elements.

[0040] In addition, unless there is an explicit description to the contrary, the word "including" and variations such as "comprising" or "containing" will be understood as meanin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

There are provided a semiconductor device and a method of manufacturing the same, capable of removing a shoot-through phenomenon by forming capacitance between an electrode and a lateral surface of a protrusion region of a gate and increasing a gate-source capacitance. The semiconductor device may include: a semiconductor body having a predetermined volume; a source formed on an upper surface of the semiconductor body; a gate formed in a groove of the semiconductor body and having a protrusion region protruded upwardly of the upper surface of the semiconductor body, the groove having a predetermined depth and the protrusion region having a protrusion height altered depending on a level of capacitance to be set; and an electrode electrically connected to the source to form capacitance together with a lateral surface of the protrusion region of the gate.

Description

[0001] References to related applications [0002] This application claims the priority of Korean Patent Application No. 10-2011-0141939 filed with the Korean Intellectual Property Office on December 26, 2011, and the disclosure of which is incorporated herein by reference. Technical field [0003] The present invention relates to a semiconductor device having resistance (resistance) to shoot-through that may occur in a power supply device and a manufacturing method thereof. Background technique [0004] Generally, various solutions are adopted to implement electronic devices that meet various user needs, and these electronic devices may include a power supply device for providing working power to implement functions of various devices. [0005] Due to the advantages of power conversion efficiency and miniaturization, the power supply device usually adopts a switch mode power supply type. [0006] figure 1 It is a schematic circuit diagram of a general power supply device. [0007] refe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423H01L21/336
CPCH01L29/4236H01L29/66666H01L29/66734H01L29/7803H01L29/7813H01L29/7827H01L29/66712
Inventor 朴在勋徐东秀
Owner SAMSUNG ELECTRO MECHANICS CO LTD