Apparatus and method for finFET

Abstract

A FinFET comprises an isolation region formed in a substrate, a cloak-shaped active region formed over the substrate, wherein the cloak-shaped active region has an upper portion protruding above a top surface of the isolation region. In addition, the FinFET comprises a gate electrode wrapping the channel of the cloak-shaped active region. The invention further discloses an apparatus and method for FINFET.

Description

technical field [0001] The present invention relates to the field of semiconductor technology, and more particularly, to devices and methods for FinFETs. Background technique [0002] The semiconductor industry has developed rapidly due to the continuous improvement of the integration density of various electronic components (ie: transistors, diodes, resistors, capacitors, etc.). To a large extent, the increase in integration density is due to the continuous reduction of the minimum feature size, so that more components can be integrated in a given area. However, smaller component sizes may result in more leakage current. Recently, the demand for smaller electronic devices has increased, and thus there is a need to reduce the leakage current of semiconductor devices. [0003] In a complementary metal-oxide-semiconductor (CMOS) field-effect transistor (FET), the active region includes a drain, a source, a channel region connected between the drain and source, and a channel ...

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Problems solved by technology

However, as the size of semiconductor devices continues to shrink, due to the short-channel leakage effect, the gate cannot fully control the channel region, especially the part of the channel region far away from the gate...

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