Apparatus and method for finFET

Abstract

A FinFET comprises an isolation region formed in a substrate, a cloak-shaped active region formed over the substrate, wherein the cloak-shaped active region has an upper portion protruding above a top surface of the isolation region. In addition, the FinFET comprises a gate electrode wrapping the channel of the cloak-shaped active region. The invention further discloses an apparatus and method for FINFET.

Description

technical field [0001] The present invention relates to the field of semiconductor technology, and more particularly, to devices and methods for FinFETs. Background technique [0002] The semiconductor industry has developed rapidly due to the continuous improvement of the integration density of various electronic components (ie: transistors, diodes, resistors, capacitors, etc.). To a large extent, the increase in integration density is due to the continuous reduction of the minimum feature size, so that more components can be integrated in a given area. However, smaller component sizes may result in more leakage current. Recently, the demand for smaller electronic devices has increased, and thus there is a need to reduce the leakage current of semiconductor devices. [0003] In a complementary metal-oxide-semiconductor (CMOS) field-effect transistor (FET), the active region includes a drain, a source, a channel region connected between the drain and source, and a channel ...

AI Technical Summary

Problems solved by technology

However, as the size of semiconductor devices continues to shrink, due to the short-channel leakage effect, the gate cannot fully control the channel region, especially the part of the channel region far away from the gate.

Therefore, after semiconductor devices are scaled down to deep sub-30 nm dimensions, the corresponding short gate lengths of conventional planar transistors can result in gates that cannot substantially close the channel region.

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