Degradation circuit for measuring threshold voltage and saturation drain current

Abstract

The invention relates to the technical field of integrated circuits, in particular to a degradation circuit for measuring a threshold voltage and a saturation drain current. The circuit comprises a PMOS transistor, an NMOS transistor, a load capacitor, a voltage comparator, a first array inverter chain and a second array inverter chain, and the mentioned components form a triangular wave generating circuit. According to the degradation circuit for measuring the threshold voltage and the saturation drain current, the triangular wave generating circuit is combined with degradation testing of the threshold voltages and the saturation drain currents of the MOS transistors, the characteristics of components are combined with circuit behaviors, the working conditions of the circuit can be changed exteriorly, and can directly, simply and conveniently test the degradation situations of the threshold voltage and the saturation drain current under various different testing conditions.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a degradation circuit for measuring threshold voltage and saturation leakage current. Background technique [0002] As the integrated circuit industry continues to grow, device dimensions continue to shrink, and designing reliable circuits has become more complex. The integration of the chip increases, the thickness of the oxide layer enters the nanometer level, and the voltage continues to decrease, making the reliability problem more and more prominent. Oxide breakdown and deep submicron MOS device characteristic degradation are the two most important research issues in terms of device reliability. Both of them play a decisive role in the lifetime of the device. [0003] There are many reasons for the degradation of MOS device characteristics, hot-carrier injection (hot-carrier injection, HCI) and negative bias temperature instability (negative bias temperature in...

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Problems solved by technology

[0006] However, for the above-mentioned circuits, there is no direct correspondence between the measured period, frequency, voltage, current, etc., and the threshold voltage, on-state current, etc. that need to be characterized, and often require more calculation and analysis. , simplicity

Moreover, the above-mentioned circuit lacks an external input control terminal, its flexibility is poor, and it takes a long time to design in order to adapt to the test instrument

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