Pulsed DC testing system and method of GaN HEMT microwave power device

Abstract

The invention discloses a pulsed DC testing system and method of a GaN HEMT microwave power device. A vector network analyzer is used for testing the S parameter of the GaN HEMT microwave power device, or a semiconductor analyzer is used for testing the pulse direct current characteristic of the GaN HEMT microwave power device. The two output ends of the vector network analyzer or the semiconductor analyzer respectively load pulse radiation frequency signals to the grid electrode and the drain electrode of a tested GaN HEMT device through a Bias Tee. Two DC power supplies with different voltage grades are respectively loaded on two Bias Tees through two groups of switches. According to the pulsed DC testing system and method of the GaN HEMT microwave power device, when the GaN HEMT microwave power device is tested, pulse DC voltages are used, two groups of switch circuits control the DC power supplies applied on the Bias Tees to be connected, and the automatic heating phenomenon of the GaN HEMT and the performance deterioration of the microwave power device caused by continuously applying of the DC voltages on the GaN HEMT are avoided.

Description

technical field [0001] The invention relates to an S parameter pulse direct current test method of a GaN HEMT microwave power device. Background technique [0002] When testing the S parameter of GaN HEMT microwave power devices, that is, the radio frequency small signal test, it is usually necessary to apply a continuous DC voltage to the GaN HEMT. Under such continuous DC measurement conditions, the GaN HEMT will generate self-heating, which affects the GaN HEMT. Its own electrical performance, and will increase the risk of device damage. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a GaN HEMT S parameter pulsed DC test system and test method. When testing the GaN HEMT S parameter, a pulsed DC voltage is used to avoid the thermal effect of the GaN HEMT. [0004] In order to solve the above-mentioned technical problems, the present invention provides a GaN HEMT microwave power device pulsed DC test system, w...

AI Technical Summary

Problems solved by technology

[0002] When testing the S parameter of GaN HEMT microwave power devices, that is, the radio frequency small signal test, it is usually necessary to apply a continuous DC voltage to the GaN HEMT. Under such continuous DC measurement conditions, the GaN HEMT will generate self-heating, which affects the GaN HEMT. own electrical properties, and increases the risk of device damage

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