Projection objective focal plane shape measuring and marking device and application
A technology of projection objective lens and marking device, which is applied in the field of ultra-precision measurement, can solve problems affecting the control accuracy of the focal plane of the lithography machine, and achieve the effect of improving the control precision of the focal plane
Inactive Publication Date: 2014-03-05
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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Problems solved by technology
[0005] The technical problem of the present invention is to overcome the deficiencies in the prior art, provide a measurement marking device for measuring the real focal plane shape of the projection objective lens, and provide the application of the measurement marking device in improving the control accuracy of the focal plane of the lithography machine, so as to solve the problem of The problem that the shape of the focal plane of the projection objective lens affects the control accuracy of the focal plane of the lithography machine
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[0020] In order to make the purpose, technical solution and advantages of the present invention more clear, the working principle, structure and specific implementation of the present invention will be further introduced below in conjunction with the accompanying drawings.
[0021] Such as figure 1 , figure 2 It shows a schematic structural diagram of the projection objective lens focal plane shape measurement marking device provided by the present invention. The measurement mark contains a chrome-plated area 1, a light-transmitting area 2, and a phase groove area 3, wherein:
[0022] The width ratio of the chrome-plated area 1, the light-transmitting area 2, and the phase-groove area 3 is 2:1:1; the phase-groove area 3 has a phase depth of 90°; Region 2 and phase groove region 3 are glass substrates.
[0023] image 3 A schematic diagram showing the structure of the measurement mark device that can improve the measurement resolution of the focal plane shape of the project...
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The invention provides a projection objective focal plane shape measuring and marking device and application. The projection objective focal plane shape measuring and marking device comprises a chromeplating area, a light-permeating area and a phase position groove area, wherein the width ratio of the chromeplating area to the light-permeating area to the phase position groove area is 2:1:1, and the phase depth of the phase position groove area is 90 degrees. When the projection objective focal plane shape measuring and marking device is used, a measurement mask with measuring marks capable of improving the projection objective focal plane shape measuring resolution is manufactured, and the measuring marks are evenly distributed in the whole exposure field range; after the mask is exposed, the corresponding relation between the formula defocusing amount and the interference fringe offset is combined to obtain the real projection objective focal plane shape can be obtained by measuring the interference fringe offset on the surface of a silicon wafer; in the focal plane control process of a photoetching machine, projection objective focal plane data are correspondingly subtracted from silicon wafer surface height data before surface fitting is carried on a silicon wafer exposure field, and then the surface fitting is carried out on obtained results to further complete ultrahigh-accuracy focal plane control of the photoetching machine.
Description
technical field [0001] The invention belongs to the technical field of ultra-precision measurement, and relates to a measuring marking device for the focal plane shape of a projection objective lens and an application thereof. Background technique [0002] The development of the integrated circuit industry has always followed Moore's Law, that is, the integration level doubles every 18 months, and the feature size (ie resolution) of the device shrinks to 1 / 2 of the original value every 18 months. The improvement of resolution can be achieved by shortening the exposure wavelength and increasing the numerical aperture, but both will lead to a sharp shortening of the focal depth of lithography; at the same time, the flatness of the silicon wafer brought about by the use of large diameter silicon wafers , thickness uniformity and other issues require lithography equipment to have a large depth of focus to complete the effective exposure of silicon wafers; the contradiction betwe...
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Login to View More IPC IPC(8): G01M11/02G03F7/207
Inventor 李金龙胡松赵立新李兰兰邸成良
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI