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Method for detecting corrosion of metal wiring in production environment

A metal wiring, production environment technology, used in semiconductor/solid state device testing/measurement, electrical components, circuits, etc., can solve problems such as yield loss, slow electrochemical corrosion, etc.

Active Publication Date: 2016-04-27
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the above existing problems, the present invention discloses a method for detecting the corrosion of metal wiring in the production environment, in order to overcome the slow electrochemical corrosion of metal wiring in the existing structure in the prior art, and some may have already occurred A certain degree of electrochemical reaction cannot be found by the monitoring method of the production process. It may not be determined until the final electrical test fails, which will cause the problem of yield loss.

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  • Method for detecting corrosion of metal wiring in production environment
  • Method for detecting corrosion of metal wiring in production environment
  • Method for detecting corrosion of metal wiring in production environment

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Embodiment 1

[0033] Such as Figure 3-Figure 6 As shown, this embodiment relates to a method for detecting corrosion of metal wiring in a production environment, including the following steps:

[0034] S1, a wafer is provided, and an ion trap assembly structure is prepared on the dicing lane of the wafer. The ion trap assembly structure includes ion trap structures of various device structures D1, D2...Dn, and the ion trap structure of each device Both the middle P well and the N well are connected to metal wires through contact holes above them.

[0035] S2, placing the wafer with the prepared ion trap assembly structure in a normal production environment.

[0036] S3, observe the electrochemical corrosion of the metal wires of the ion trap structures of various device structures D1, D2...Dn in the ion trap combination structure on the wafer dicing track through a microscope.

[0037] Wherein, step S1 is specifically: preparing P well 11 and N well 12 of various device structures on the...

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Abstract

The invention discloses a method for detecting metal-wire corrosion by a production environment. The method includes the following steps: providing a wafer and preparing an ion-trap combination structure on a scribe line of the wafer, wherein the ion-trap combination structure includes ion-trap structures of different kinds of device structures and a P trap and an N trap of the iron-trap structure of each device are connected with metal wires through contact holes above the P trap and the N trap; placing the wafer in which the iron-trap combination structure is prepared well in a normal production environment; and observing the electrochemical-corrosion condition of the metal wires of the iron-trap combination structure on the scribe line of the wafer through a microscope. Through the technical scheme, effects of the production environment on the corrosion of the metal wires can be detected faster so that corresponding improvement in actual production is facilitated and thus yield of the product is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for detecting corrosion of metal wiring in a production environment. Background technique [0002] With the continuous progress of VLSI production technology, the influence of environment on device performance in the production process is also increasing. With the continuous reduction of the line width of integrated circuits, especially in the back-stage copper metal interconnection process, electrochemical reactions may occur on the surface of the wafer within a few hours after chemical mechanical polishing. figure 1 Defects on metal shown. The generation of defects is directly related to the microenvironment of the wafer surface and the device structure under the metal wiring. At present, there are mature processes and technologies for the detection of air particles and chemical components in the clean room of integrated circuit production, but th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
CPCH01L22/00H01L22/32
Inventor 倪棋梁王凯陈宏璘龙吟
Owner SHANGHAI HUALI MICROELECTRONICS CORP