Periodic self-checking recovery method of random access memory

A technology of random access memory and recovery method, applied in static memory, instruments, etc., can solve the problem of error correction ability algorithm limitation, protection failure and so on

Active Publication Date: 2014-03-26
XIAN INSTITUE OF SPACE RADIO TECH
View PDF4 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Effectively solve the problem that traditional redundancy measures may cause protection failure due to error accumulation and the problem of error correction coding technology error correction ability algorithm limitation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Periodic self-checking recovery method of random access memory
  • Periodic self-checking recovery method of random access memory
  • Periodic self-checking recovery method of random access memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific implementation circuits.

[0030] Such as figure 1 As shown, a process flow of a periodic self-test error recovery method for a random access memory. According to the application mode of random access memory, there are two ways to realize the periodical self-test recovery method of random access memory: figure 2 As shown, a kind of implementation independent of the user function when the user uses a single port of the memory to realize the function; for example image 3 As shown, one is the realization of combining with the user function when the user uses the memory dual port to realize the function.

[0031] The described periodical self-diagnosis error recovery method comprises the following steps:

[0032] (1) Configure the parameters of the random access memory; design the parameter configuration file, and configure the two parameters of th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a periodic self-checking recovery method of a random access memory, which can perform error tolerance and correction design on the random access memory. The method comprises the steps of firstly performing redundancy processing on the random access memory, performing three-evaluation and two-judgment and consistency comparison on redundancy output results through a design judgment module, taking judgment results as error correction input data, and taking consistency comparison results as error correction enabling data. Simultaneously an address generating module periodically generates memory read addresses, so as to realize error detection control. The invention can provide an error detection and correction method for the random access memory which easily generates error caused by external causes (such as space radiation environment and the like), and improves the problem of error accumulate invalidation of the traditional redundancy error tolerance technology, the error correction capability is not limited by error correction and detection algorithm, and the memory is effectively protected.

Description

technical field [0001] The invention relates to a method for periodical self-checking error recovery of a random access memory, and belongs to the technical field of single event effect protection of the on-board random access memory. Background technique [0002] The space radiation environment will bring single event effects to CMOS devices. The random access memory used to store large amounts of data is a sensitive resource for single event flip effects. If there are no protective measures after flip errors, it may cause user design errors and affect system reliability. sex. When the user uses the random access memory to store the temporary data that is being used or will be used soon, an error will only affect the result of the current operation, and attention should be paid to the impact of the wrong data transmission. If the user is using memory resources to store constant critical data, a soft error will keep that portion of the error alive. Errors can continue to a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/44
Inventor 贾亮周国昌赖晓玲巨艇张国霞朱启
Owner XIAN INSTITUE OF SPACE RADIO TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap