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Variable resistance memory structure and its forming method

A technology of resistive storage and conductive structure, which is applied in the direction of electrical components, etc.

Active Publication Date: 2017-09-12
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Despite the attractive features discussed above, there are still many challenges associated with the development of RRAM

Method used

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  • Variable resistance memory structure and its forming method
  • Variable resistance memory structure and its forming method
  • Variable resistance memory structure and its forming method

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Embodiment Construction

[0025] The making and using of exemplary embodiments are described in detail below. It should be appreciated, however, that the present invention provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are exemplary only and do not limit the scope of the invention.

[0026] According to one or more embodiments of the present invention, a semiconductor structure includes a variable resistance memory structure. The variable resistance memory structure includes a variable resistance layer formed between two electrodes. The resistance of the variable resistance layer is changed by applying a specified voltage to each of the two electrodes. Use low and high resistance to indicate a digital signal "1" or "0", allowing data storage. The switching behavior depends not only on the material of the variable resistance layer, but also on the chosen electrode and the interfacial properties of this electr...

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Abstract

A variable resistance memory structure and a method for forming the same. A semiconductor structure includes a variable resistance memory structure. The semiconductor structure also includes a dielectric layer. A portion of the variable resistance memory structure is located above the dielectric layer. The variable resistance memory structure includes a first electrode embedded in a dielectric layer; a variable resistance layer disposed above the first electrode and a part of the dielectric layer; and a second electrode disposed above the variable resistance layer.

Description

technical field [0001] The present invention relates generally to semiconductor structures and, more particularly, to variable resistance memory structures and methods of forming variable resistance memory structures. Background technique [0002] Among integrated circuit (IC) devices, resistive random access memory (RRAM) is an emerging technology for next-generation non-volatile memory devices. RRAM is a memory structure that includes an array of RRAM cells, each of which stores a data bit using a resistance value, rather than an electric charge. Specifically, each RRAM cell includes a variable resistance layer, and the resistance of the variable resistance layer can be adjusted to represent logic "0" or logic "1". [0003] From an application point of view, RRAM has many advantages. Compared with other non-volatile memory structures, RRAM has a simple cell structure and a comparable process of CMOS logic, which reduces the complexity and cost of manufacturing. Despite ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/24H10N70/826H10N70/8833H10N70/063
Inventor 涂国基
Owner TAIWAN SEMICON MFG CO LTD