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Method of separating substrate and method of fabricating semiconductor device using the same

一种半导体、基板的技术，应用在分离基板的一种方法和一种利用该方法制造半导体装置领域，能够解决再现性低、不适于大基板分离、分离基板工艺再现性和可靠性低等问题，达到防止效率和可靠性方面被劣化的效果

Active Publication Date: 2014-07-02
SEOUL VIOSYS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it takes a long time to separate a 2-inch thick substrate using an etching solution, and such a void forming method is not suitable for the separation of large substrates
[0011] In addition, the method of void formation using ECE has low reproducibility
Therefore, the process reproducibility and reliability of separating the substrate are low, resulting in low process yield

Method used

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  • Method of separating substrate and method of fabricating semiconductor device using the same
  • Method of separating substrate and method of fabricating semiconductor device using the same
  • Method of separating substrate and method of fabricating semiconductor device using the same

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Embodiment Construction

[0041] Embodiments of the present invention will be described in more detail with reference to the accompanying drawings. It should be understood that the following Examples are given by way of illustration only in order to provide those skilled in the art with a comprehensive understanding of the present invention. Therefore, the present invention is not limited to the following embodiments, but can be implemented in various ways. In addition, like components will be designated by like reference numerals throughout the specification, and the thickness, length, and width of some elements, layers, or features may be exaggerated for clarity. It will be understood that when an element is referred to as being disposed "on" or "on" another element, it can be directly disposed on the other element or intervening layers may also be present. Throughout the specification, like components will be denoted by like reference numerals.

[0042] Embodiments of the invention described herei...

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Abstract

A method of fabricating a semiconductor device, the method including: forming a first mask pattern including a masking region and an open region on a substrate; forming a sacrificial layer to cover the substrate and the first mask pattern; patterning the sacrificial layer to form a seed layer and to expose the first mask pattern; forming a second mask pattern on the exposed first mask pattern; forming an epitaxial layer on the seed layer and the second mask pattern, and forming a void between the second mask pattern and the epitaxial layer; and separating the substrate from the epitaxial layer.

Description

[0001] This application claims priority and benefit from Korean Patent Application No. 10-2012-0153008 filed on December 26, 2012, which is incorporated by reference for all purposes as if fully set forth herein. technical field [0002] The present invention relates to a method of separating a substrate and a method of manufacturing a semiconductor device using the method, and more particularly, to a method of separating a substrate in which a sacrificial layer is patterned to form a void between a substrate and an epitaxial layer And a method of manufacturing a semiconductor device using the method. Background technique [0003] Light emitting diodes are inorganic semiconductor devices that emit light through recombination of electrons and holes, and have recently been used in various fields such as displays, lamps for vehicles, and lighting. [0004] Light emitting diodes can be divided into side light emitting diodes and vertical light emitting diodes according to the po...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
CPCH01L33/22H01L33/0079H01L33/0095H01L33/0075H01L33/007H01L33/0093H01L21/20H01L33/12
Inventor 张钟敏金华睦李圭浩金昶勋徐大雄印致贤朴大锡蔡钟泫
Owner SEOUL VIOSYS CO LTD