Organic light-emitting device and fabrication method thereof
An electroluminescence device and electroluminescence technology, which are applied in the fields of electric solid state devices, semiconductor/solid state device manufacturing, electrical components, etc., to achieve the effect of improving flexibility
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Embodiment 1
[0055] A method for preparing an organic electroluminescent device, comprising the following steps:
[0056] (1) Pre-treatment of ITO glass substrate 1: put ITO conductive glass substrate 1 into acetone, ethanol, deionized water, and ethanol in sequence, ultrasonically clean them for 5 minutes, then blow dry with nitrogen, and dry them in an oven for later use; The cleaned ITO glass substrate 1 is subjected to surface activation treatment to increase the oxygen content of the conductive surface layer and improve the work function of the conductive layer surface; the thickness of the ITO glass substrate 1 is 100nm;
[0057] (2) Preparation of luminescent functional layer 2:
[0058] Hole injection layer 21: MoO is evaporated on the ITO glass substrate 1 3 Hybrid material obtained by doping NPB, MoO 3 The doping mass fraction is 30%, and the evaporation is carried out by high-vacuum coating equipment, and the vacuum degree during evaporation is 1×10 -5 Pa, the evaporation rat...
Embodiment 2
[0075] A method for preparing an organic electroluminescent device, comprising the following steps:
[0076] (1), (2), (3) are the same as embodiment 1;
[0077] (4) Preparation of encapsulation layer:
[0078](a) Preparation of the first organic barrier layer: TAPC was vacuum-evaporated on the cathode layer to obtain a first organic barrier layer with a thickness of 200 nm and a vacuum degree of 1×10 -5 Pa, the evaporation rate is
[0079] (b) Preparation of the second organic barrier layer: Bphen was vacuum evaporated on the first organic barrier layer to obtain a second organic barrier layer with a thickness of 200 nm and a vacuum degree of 1×10 -5 Pa, the evaporation rate is
[0080] (c) Preparation of the first inorganic barrier layer: a first inorganic barrier layer with a thickness of 200 nm was prepared on the second organic barrier layer by magnetron sputtering, and the material of the first inorganic barrier layer was Ni-Ti and Re 2 Mixed materials formed by ...
Embodiment 3
[0088] A method for preparing an organic electroluminescent device, comprising the following steps:
[0089] (1), (2), (3) are the same as embodiment 1;
[0090] (4) Preparation of encapsulation layer:
[0091] (a) Preparation of the first organic barrier layer: NPB was vacuum-evaporated on the cathode layer to obtain a first organic barrier layer with a thickness of 300 nm, and the vacuum degree was 1×10 -4 Pa, the evaporation rate is
[0092] (b) Preparation of the second organic barrier layer: BCP was vacuum evaporated on the first organic barrier layer to obtain a second organic barrier layer with a thickness of 300 nm, and the vacuum degree was 1×10 -4 Pa, the evaporation rate is
[0093] (c) Preparation of the first inorganic barrier layer: a first inorganic barrier layer with a thickness of 100 nm was prepared on the second organic barrier layer by magnetron sputtering, and the material of the first inorganic barrier layer was a mixture of Ag-Cd and ReO Material...
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Abstract
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