Electrode used for dry etching device and preparation method thereof, and dry etching device

Abstract

The invention provides an electrode and a preparation method thereof and a dry etching device of the electrode. Through separate design of the electrode, the electrode includes an electrode substrate and a protection layer attached on the upper surface and side surfaces of the electrode substrate. The protection layer has a structure which matches the electrode substrate. When reactants and by-products attached on the protection layer are to affect etching of a glass substrate after the electrode works for a period of time, the protection layer can be partly replaced. Ceramic cleaning or stripping maintenance is carried out without disassembly of the electrode so that high-intensity electrode maintenance work is prevented. At the same time, the protection layer is designed into a film layer with elasticity so that friction and collision of the glass substrate and protrusions are reduced and pressure damage defect of the back part of the glass substrate is prevented.

Description

technical field [0001] The invention relates to the technical field of dry etching equipment, in particular to an electrode for dry etching equipment, a preparation method thereof, and dry etching equipment. Background technique [0002] The existing dry etching equipment is provided with an electrode below the etching chamber, and the electrode and the electrode arranged above the etching chamber form an electrode pair, and the electrode pair is pressurized to form an etching electric field, for example, the electric field can be Guide and accelerate the plasma so that it has a certain energy. When it bombards the surface of the object to be etched, the atoms of the material to be etched will be knocked out, so as to realize the etching by physical energy transfer. Purpose. [0003] In addition, an electrostatic chuck is provided under the electrode under the etching chamber, and the support and adsorption of the glass substrate (object to be etched) is realized by adjusti...

AI Technical Summary

Problems solved by technology

[0006] However, if figure 2 As shown, when the dry etching equipment bombards the metal layer on the substrate 1, metal atoms will be sputtered, and the metal atoms will react with the reaction gas to form a metal compound, most of which will be drawn out of the etching chamber, but in the electric field of the chamber and Under the complex action of gas flow, the metal compound will inevitably partially remain on the surface of the electrode 2, especially when the metal etching process will produce a molybdenum (Mo) compound. After long-term use of the electrode, due to the molybdenum (Mo) compound and other by-products ( figure 2 middle black filled area) remains on the protrusion 21, the surface of the protrusion 21 will be in surface contact with the glass substrate 1 due to the adhesion of reactants and by-products, and when the cooling gas is introduced, the protrusion 21 will quickly contact the corresponding glass substrate 1 for heat exchange, so that the temperature of this part of the glass substrate 1 is rapidly reduced; and the part of the glass substrate 1 around the protrusion 21 is in contact with the cooling gas for heat exchange, and its heat exchange rate is relatively slow. 1 The temperature drops slowly; therefore, temperature differences will occur on the entire surface of the glass substrate 1, resulting in differences in the etching capabilities between the position of the protrusion 21 and the adjacent area, resulting in poor etching effects, which will seriously affect the prepared thin film transistor device performance and cause poor display of the final product

The longer the electrode 2 is used, the worse the adverse results will be

[0007] At present, periodic electrode 2 cleaning and electrode 2 surface ceramic peeling repair are generally used to improve the bad etching effect, and the labor cost and maintenance cost are high.

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