Unlock instant, AI-driven research and patent intelligence for your innovation.

Switching circuit arrangement and method for providing power to a driver circuit

A driver circuit, a technology for switching circuits, applied in the field of switching circuit devices and for supplying power to driver circuits

Active Publication Date: 2017-04-12
INFINEON TECH AUSTRIA AG
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the case where such a power transistor is driven by a voltage source, changes in the voltage of the voltage source and in the input characteristics of the transistor, for example due to temperature changes or parameter changes, can lead to substantial changes in the operating point of the transistor, which is usually unexpected

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Switching circuit arrangement and method for providing power to a driver circuit
  • Switching circuit arrangement and method for providing power to a driver circuit
  • Switching circuit arrangement and method for providing power to a driver circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] The following detailed description refers to the accompanying drawings, which show, by way of illustration, specific details and embodiments in which the invention may be practiced.

[0012] The word "exemplary" is used herein to mean "serving as an example, instance or illustration." Any embodiment or design described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments or designs.

[0013] figure 1 A switching circuit arrangement 100 according to various embodiments is shown. The circuit arrangement 100 may include a power supply circuit 120 , a first circuit 102 , a driver circuit 110 , a switch circuit 112 and a load circuit 118 .

[0014] The power supply circuit 120 may be configured to provide power to the driver circuit 110 . In various embodiments, the power supply circuit 120 may include the first circuit 102 that may be configured to vary the output impedance of the power supply circuit 120 . In vari...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

In various embodiments, switching circuitry is provided. The switching circuit arrangement may include a switching circuit, a driver circuit and a power supply circuit. The driver circuit may be configured to control the switch circuit. The power supply circuit may be configured to provide power to the driver circuit. The power supply circuit may include a first circuit configured to modify an output impedance of the power supply circuit to: have a first impedance when the driver circuit controls the switch circuit to be in a conductive state; It has a second impedance when changing from a non-conducting state to a conducting state.

Description

technical field [0001] Various embodiments relate generally to switching circuitry and methods for providing power to driver circuits. Background technique [0002] Switching transistors such as eg power metal oxide semiconductor field effect transistors (power MOSFETs) or insulated gate bipolar transistors (IGBTs) may be used in power electronics. These transistors require little gate current when they are in the ON state (or conducting state). Such power transistors are typically driven with low-ohmic (or low-impedance) drivers, such as voltage sources, to achieve short switching times in order to keep switching power losses low. [0003] In addition, a power transistor having a gate-source characteristic similar to that of a PN junction can be used. Examples of such transistors include junction field effect transistors (junction FETs) and high electron mobility transistors (HEMTs). Examples of junction field effect transistors may include transistors having wide bandga...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/08
CPCH02M1/08H03K17/163H03K17/16
Inventor B·佐杰
Owner INFINEON TECH AUSTRIA AG