Unlock instant, AI-driven research and patent intelligence for your innovation.

Formation method of air gap in copper interconnection

A technology of air gap and copper interconnection, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as metal damage, and achieve the effect of improving adhesion and preventing damage

Active Publication Date: 2018-01-26
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the Chinese patent application 201310220463.4, a carbon-containing sacrificial layer is used to form an air gap, but oxygen is used for removal, which will damage the metal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Formation method of air gap in copper interconnection
  • Formation method of air gap in copper interconnection
  • Formation method of air gap in copper interconnection

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] see figure 1 , and also see Figure 2 to Figure 9 , the formation method of air gap in copper interconnection of the present invention, it comprises the following steps:

[0026] Step S01, such as figure 2 As shown, a substrate 10 formed with a first copper metal pattern 11 is provided, a dielectric material layer 12 and a sacrificial layer 13 are sequentially deposited on the substrate 10, and double damascene is formed in the dielectric material layer 12 and the sacrificial layer 13 Structure 14, such as image 3 shown.

[0027] Among them, the dielectric material layer in this embodiment can be selected from silicon dioxide, fluorine-doped silicon dioxide or ultra-low dielectric materials, and the sacrificial layer can be selected from plasma-deposited amorphous carbon or spin-coated carbon organic polymer. Among them, the process temperature of amorphous carbon deposition can be 300-500°C, the radio frequency power can be 200-500W, and the reaction gas is C 2...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for forming air gaps in copper interconnection. After a dual-damascene structure is formed, oxidation layers are deposited on the side walls of the dual-damascene structure, then metal filling is conducted, the oxidation layers are reserved on the side walls of metal after a sacrificial layer is removed, damage caused when the sacrificial layer is etched to the metal is avoided, and adhesion of a following barrier layer and the metal can be improved.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor integrated circuits, in particular to a method for forming air gaps in copper interconnections. Background technique [0002] In the process development of VLSI, due to the improvement of chip speed and the reduction of power consumption, etc., the delay of metal interconnection lines has far exceeded the delay of devices. In order to reduce the interconnect delay, copper replaced aluminum to reduce the interconnect resistance, and low dielectric constant materials (fluorine-doped silicon dioxide (FSG), carbon-doped silicon dioxide (SiCOH)) replaced silicon dioxide , can reduce the dielectric constant and thereby reduce the interconnection capacitance, all of which are applied in the semiconductor manufacturing process. With the development of the process, the characteristic structure is close to the mean free path of electrons in the metal, which intensifies the surface and g...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
CPCH01L21/76837
Inventor 胡正军
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT