Dynamic adjustment Nand flash error detection method and dynamic adjustment Nand flash error detection device

An error detection and dynamic adjustment technology, applied in static memory, instruments, etc., can solve problems such as ECC unit data failure, and achieve the effect of ensuring product life and data reliability

Active Publication Date: 2015-05-27
广东华晟数据固态存储有限公司
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Problems solved by technology

However, the number of Bit flips will increase with time, and as time accumulates, the total number of Bit flips in the ECC unit will exceed the capacity of the ECC engine, resulting in data failure of the entire ECC unit

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  • Dynamic adjustment Nand flash error detection method and dynamic adjustment Nand flash error detection device
  • Dynamic adjustment Nand flash error detection method and dynamic adjustment Nand flash error detection device
  • Dynamic adjustment Nand flash error detection method and dynamic adjustment Nand flash error detection device

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Embodiment Construction

[0030] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0031] Any feature disclosed in this specification (including any appended claims, abstract and drawings), unless expressly stated otherwise, may be replaced by alternative features which are equivalent or serve a similar purpose. That is, unless expressly stated otherwise, each feature is one example only of a series of equivalent or similar features.

[0032] Nand Flash uses pages as the smallest read / write unit during its operation, and several Pages (128 / 256 / 512) form a block Block. The existing inspection scheme reads each page in the block sequentially according to the order of the blocks, s...

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Abstract

The invention provides a dynamic adjustment Nand flash error detection method and a device. The method comprises the steps that according to differences of physical properties of positions, at which various pages are located, in the Nand flash, and the pages in a block are divided into different groups according to the differences of ECC (Error Correction Code) growth rates; in the practical patrol operation, different ECC patrol threshold values are distributed according to the differences of the ECC growth rates in different pages and groups; the page with faster ECC growth has lower ECC patrol threshold value, otherwise reversed; in the process of performing the patrol, a cold and hot subarea of the physical location of the page is enquired; data volume written in the area in unit time acting as the basis, the more the data is written in, the hotter the area is; a coefficient of the cold and hot subarea is obtained; and the patrol threshold value is adjusted. By adopting dynamic adjustment, actual conditions of particles can be met better, and on the premise of guaranteeing the data reliability, the product life is guaranteed to the greatest extent.

Description

technical field [0001] The invention relates to a dynamically adjusted flash memory error detection method and device, in particular to a dynamically adjusted flash memory error detection method and device suitable for including Nand Flash flash media. Background technique [0002] At present, Nand Flash, as a non-volatile storage medium, has been widely used from TF card, SD card to SSD hard disk and various electronic devices. The external packaging form of Nand Flash flash memory is a granular design. Each particle has one or more Dies. Each Die is composed of several blocks, and the block is composed of pages. The pages contain several data units. These data units are based on the design. Data from 1 bit to several bits can be stored. In terms of operation, it must be erased before writing. The smallest unit of erasing is a block, and the smallest unit of writing and reading is a page. Nand Flash has a lifespan, and the erase / write cycle is used as a standard indicator...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/42
Inventor 黎智
Owner 广东华晟数据固态存储有限公司
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