Ionization rate detection device and method

Abstract

The invention relates to an ionization rate detection device and method. The device comprises an ion deposition rate detection unit and a total deposition rate detection unit. The total deposition rate detection unit is used for detecting the thickness of a film deposited on a processed workpiece to acquire the total deposition rate of sputtered particles; and the ion deposition rate detection unit is used for detecting the deposition rate of ions in sputtered particles, and comprises conductive metal sheets, a separator, a current detection apparatus and a direct current power supply. The conductive metal sheets are arranged on the processed workpiece, the separator is used for electric insulation of the conductive metal sheets from the outside and is provided with vertical through-holes above the conductive metal sheets, the direct current power supply is used for loading negative bias to the conductive metal sheets, and the current detection apparatus is used for detecting current on a circuit. The deposition rate of ions in sputtered particles can be calculated according to the current, and the ionization rate of sputtered particles can be obtained by calculating the ratio of ion deposition rate of sputtered particles to the total deposition rate.

Description

technical field [0001] The invention relates to the technical field of microelectronic processing, in particular to an ionization rate detection device and method. Background technique [0002] The use of Physical Vapor Deposition (Physical Vapor Deposition, hereinafter referred to as PVD) equipment to deposit thin films on the processed workpiece by sputtering can generally be divided into the following two types: depositing thin films on the surface of the processed workpiece and filling deep holes on the processed workpiece. hole. Among them, the use of PVD equipment to fill the deep holes on the processed workpiece is achieved by bombarding the target with charged particles, so that the particles on the surface of the target are separated from the target, enter and deposit in the deep hole from the opening of the deep hole; among them, from The particles released from the target surface include neutral atoms and charged ions. In the above process, due to the high aspec...

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Problems solved by technology

[0005] However, in the prior art, there is no device and method that can accurately detect the ionization rate in the sputtered particles, because the number of ions and the total number of particles in the sputtered particles are difficult to be accurately detected, that is, The proportion of the number of ions in the sputtered particles cannot be calculated, the so-called ionization rate of the sputtered particles

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