Ionization rate detection device and method

Abstract

The invention relates to an ionization rate detection device and method, which includes an ion deposition rate detection unit and a total deposition rate detection unit; the total deposition rate detection unit is used to obtain sputtered particles by detecting the thickness of a film deposited on a processed workpiece The total deposition rate; the ion deposition rate detection unit is used to detect the deposition rate of ions in the sputtered particles, which includes a conductive metal sheet, a spacer, a current detection device and a DC power supply; the conductive metal sheet is placed on the workpiece; the spacer It is used to electrically insulate the conductive metal sheet from the outside; the spacer is provided with a vertical through hole at the position above the conductive metal sheet; the DC power supply is used to load the negative bias voltage on the conductive metal sheet; the current detection device is used to detect the circuit The current on the current; the deposition rate of ions in the sputtered particles is obtained by calculating according to the current, and the ionization rate of the sputtered particles is obtained by calculating the ratio of the ion deposition rate of the sputtered particles to the total deposition rate.

Description

technical field [0001] The invention relates to the technical field of microelectronic processing, in particular to an ionization rate detection device and method. Background technique [0002] The use of Physical Vapor Deposition (Physical Vapor Deposition, hereinafter referred to as PVD) equipment to deposit thin films on the processed workpiece by sputtering can generally be divided into the following two types: depositing thin films on the surface of the processed workpiece and filling deep holes on the processed workpiece. hole. Among them, the use of PVD equipment to fill the deep holes on the processed workpiece is achieved by bombarding the target with charged particles, so that the particles on the surface of the target are separated from the target, enter and deposit in the deep hole from the opening of the deep hole; among them, from The particles released from the target surface include neutral atoms and charged ions. In the above process, due to the high aspec...

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Problems solved by technology

[0005] However, in the prior art, there is no device and method that can accurately detect the ionization rate in the sputtered particles, because the number of ions and the total number of particles in the sputtered particles are difficult to be accurately detected, that is, The proportion of the number of ions in the sputtered particles cannot be calculated, the so-called ionization rate of the sputtered particles

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