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Optical Proximity Correction Method for Two Adjacent Via Holes with the Same Potential

A technology of optical proximity correction and the same potential, which is applied in the direction of optics, photolithography on the pattern surface, and originals for photomechanical processing, etc., can solve the problem of small photolithography process window

Active Publication Date: 2019-06-28
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this invention still fails to solve the problem that the photolithography process window of two adjacent same-potential via holes is small

Method used

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  • Optical Proximity Correction Method for Two Adjacent Via Holes with the Same Potential
  • Optical Proximity Correction Method for Two Adjacent Via Holes with the Same Potential
  • Optical Proximity Correction Method for Two Adjacent Via Holes with the Same Potential

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Embodiment Construction

[0019] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0020] When using optical proximity correction to correct the through hole, firstly, the potential relationship between the two through holes is judged by combining the upper and lower metal lines. In the figure below, L2 represents the lower layer metal line, L11, L12, and L13 represent the first upper layer metal line, the second upper layer metal line, and the third upper layer metal line, respectively, and L01 and L02 represent the first through hole and the second through hole.

[0021] Preferably, the upper layer metal lines and the lower layer metal lines are two adjacent layers of metal lines connected to the via layer.

[0022] If two vias (the first via L01 and the second via L02) are connected to the same lower layer metal line L2 and...

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Abstract

The invention provides an OPC (optical proximity correction) method for two adjacent equal-potential through holes. The OPC method comprises the following steps: the potential relation between two adjacent through holes is judged in combination of upper and lower layers of metal wires before OPC is performed on the through holes, and the two adjacent through holes are combined to form a combination through hole under the condition that the two adjacent through holes have an equal-potential relation; then OPC is performed on the through hole, wherein the two adjacent through holes are in the equal-potential relation under the conditions that the two adjacent through holes are connected with the same lower-layer metal wire and connected with two different upper-layer metal wires respectively.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, and more specifically, the present invention relates to an OPC correction (Optical Proximity Correction, optical proximity correction) method for two adjacent via holes with the same potential. Background technique [0002] The via hole is used to connect the upper and lower layer metal lines. Under the existing photolithography process conditions, the photolithography process window of the via hole is often much smaller than the photolithography process window of the metal line. The lithographic process window of through holes has become an important factor affecting product yield. Conventional through-hole correction of OPC generally enlarges all the through-holes as a whole, and then uses the OPC model to correct the through-holes after the overall enlargement. [0003] As integrated circuit technology nodes get smaller and smaller, the overall enlarged size of vias is diffi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/36
CPCG03F1/36
Inventor 王丹于世瑞
Owner SHANGHAI HUALI MICROELECTRONICS CORP