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A Test Structure for Detecting Offset

A technology for testing structure and resistance structure, applied in electrical components, electrical solid devices, circuits, etc., can solve the problems of being too sensitive and insensitive to detect the offset of metal connection holes and metal layers.

Active Publication Date: 2017-08-25
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a test structure for detecting offset, which is used to solve the insensitive or overly sensitive test structure in the prior art when detecting the offset of metal connection holes and metal layers. The problem

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  • A Test Structure for Detecting Offset
  • A Test Structure for Detecting Offset
  • A Test Structure for Detecting Offset

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Embodiment Construction

[0038] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0039] Please refer to attached picture. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be change...

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Abstract

The present invention provides a test structure for detecting offset of the present invention, which at least includes: at least two first metal layers arranged in parallel at equal intervals with a resistance structure; metal connection holes formed on one end of the first metal layer; A welding pad, connected to the other end of the first metal layer; at least two second metal layers, formed on the metal connection hole and aligned with the metal connection hole; the second metal layer and the metal connection The hole is offset relative to the first metal layer; the second pad is connected to the second metal layer. The offset detection test structure of the present invention can quantitatively detect the offset of the metal layer and the metal connection hole, and can adjust the detection sensitivity according to different technical nodes and different product requirements.

Description

technical field [0001] The invention relates to the technical field of semiconductor testing, and relates to a test structure for detecting offset, in particular to a test structure for detecting offset between a metal connection hole and a metal layer. Background technique [0002] At present, the feature size of integrated circuit manufacturing is getting smaller and smaller, the number of devices integrated on a chip is increasing, and the number of layers of metal wiring required is also increasing. During the manufacturing process, whether the metal layer and the through hole are aligned, and whether the through hole can completely land on the metal line will have a direct impact on the performance of the chip. [0003] After the 0.13um process, the rear end uses copper wires instead of aluminum wires. The double damascus process ensures that the copper wires and through holes on the upper layer can be integrally formed, and there is no problem of offset. However, the ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/544
Inventor 史航陈永仇峰
Owner SEMICON MFG INT (SHANGHAI) CORP