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A kind of flash memory circuit and programming method

A flash memory and circuit technology, applied in the field of flash memory circuits and programming, can solve the problems of large circuit area and high cost, and achieve the effect of reducing area, complexity and cost

Active Publication Date: 2019-04-19
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The existing isolation circuit is composed of high-voltage tubes, the circuit area is large, and the cost is high

Method used

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  • A kind of flash memory circuit and programming method
  • A kind of flash memory circuit and programming method
  • A kind of flash memory circuit and programming method

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Experimental program
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Embodiment Construction

[0088] As mentioned above, since a high level voltage needs to be applied when programming the flash memory, and the flash memory circuit contains a low-voltage circuit part, an isolation circuit needs to be configured between the memory array and the low-voltage circuit. The existing isolation circuit is composed of high-voltage tubes, the circuit area is relatively large, and the cost is relatively high.

[0089] In the embodiment of the present invention, since the isolation array includes at least one row of the flash memory structure, and the flash memory structure is the same as the flash memory structure in the storage array, the same or similar process can be used to form the storage array and the isolation array, Therefore, the complexity and cost of flash memory circuit technology are reduced. In addition, the area of ​​the isolated array formed by the flash memory structure is smaller than the area of ​​the stored truth formed by the high voltage tube, thereby reduc...

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Abstract

A flash memory circuit and a programming method are provided. The flash memory circuit comprises a programming circuit, a storage array, an isolation array and a low-voltage decoding circuit; the storage array is coupled between the programming circuit and the isolation array; the isolation array is coupled between the storage array and the low-voltage decoding circuit; and the isolation array comprises at least one row of flash memory structures; and the quantity of each row of the flash memory structures of the isolation array corresponds to the quantity of bit lines in the storage array. With the adoption of the flash memory circuit and the programming method, the area of an isolation area in the flash memory circuit can be reduced and the cost of the isolation array is reduced.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a flash memory circuit and a programming method. Background technique [0002] Electrically Erasable Programmable Read-Only Memory (flash memory, Electrically Erasable Programmable Read-Only Memory) is a semiconductor storage device with byte (Byte) as the minimum modification unit, which can be electronically rewritten multiple times. Compared with Erasable Programmable Read-Only Memory (EPROM, Erasable Programmable Read-Only Memory), flash memory does not need to be irradiated with ultraviolet rays or removed, and a specific voltage can be used to erase the information on the chip for writing. new data. Due to the excellent performance of flash memory and the convenience of online operation, it is widely used in BIOS chips and flash memory chips that need to be frequently erased, and gradually replaces some random access memory (RAM, Random Access Memory) chips that require power...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10
Inventor 杨光军
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP