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Phase change memory device and manufacturing method thereof

A technology of a storage device and a manufacturing method, which is applied in the directions of electrical components, circuits, semiconductor devices, etc., can solve the problems of forming voids, scrapping, and reducing product reliability.

Active Publication Date: 2017-08-08
北京时代全芯存储技术股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the above-mentioned structure is filled with phase-change materials, since the bottom of the groove is small, it is easy to form voids due to incomplete filling, which also leads to reduced reliability of the product or direct scrapping

Method used

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  • Phase change memory device and manufacturing method thereof
  • Phase change memory device and manufacturing method thereof
  • Phase change memory device and manufacturing method thereof

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Embodiment Construction

[0030] Various embodiments of the present invention will be described in detail below and illustrated with accompanying drawings. In addition to these detailed descriptions, the present invention can also be widely implemented in other embodiments, any easy replacement, modification, and equivalent changes of any of the embodiments are included in the scope of the present invention, and the scope of the patent application is allow. In the description of the specification, many specific details are provided in order to enable readers to have a more complete understanding of the present invention; however, the present invention may still be practiced under the premise of omitting some or all of the specific details. Furthermore, well-known steps or elements have not been described in detail in order to avoid unnecessarily limiting the invention. The same or similar elements in the drawings will be denoted by the same or similar symbols. It should be noted that the drawings are...

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Abstract

The invention provides a phase change storage device and a manufacturing method thereof. Conductive material is partially removed so that internal diameter of a heater gradually reduces to a phase change material end, and thus contact area between the heater and the phase change material is enabled to be smaller. According to the structure, the crystalline state of the small-scope phase change material can be changed through lower current so that power consumption of the device can be reduced, and a defect of generation of holes can be avoided and reliability of the device can be enhanced.

Description

technical field [0001] The present invention relates to a storage device and its manufacturing method, in particular to a phase change storage device and its manufacturing method, which enables a smaller contact area between the heater and the phase change material. Background technique [0002] The phase change memory device is a kind of non-volatile random access memory. The phase change material in the phase change memory device can be switched between the crystalline state and the amorphous state by applying an appropriate electric current. Different states (eg, crystalline, semi-crystalline, amorphous) of phase change materials represent different resistance values. Generally speaking, the amorphous state has a higher resistance value than the crystalline state, so the data can be accessed by measuring the resistance value. [0003] In order to change the crystalline state of the phase change material, the phase change material must be heated by a heater. A conventio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00H01L27/24
Inventor 吴孝哲王博文
Owner 北京时代全芯存储技术股份有限公司