Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Single piece wet cleaning method

A wet-cleaning, monolithic technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as liquid residue, affecting chip performance, and deionized water cannot be dried.

Active Publication Date: 2018-01-26
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, in the subsequent silicon wafer drying process, since the force on the center point approaches zero, the deionized water in the center of the silicon wafer cannot be dried, resulting in liquid residue
Therefore, the central area of ​​the silicon wafer is a blind area for monolithic cleaning or etching, which is prone to defects and affects subsequent processes and even the final performance of the chip. Therefore, it is urgent to improve the cleaning method of monolithic wet equipment to improve Wafer Cleaning Efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Single piece wet cleaning method
  • Single piece wet cleaning method
  • Single piece wet cleaning method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0030] The single-piece wet cleaning method of the present invention will be further described in detail below in conjunction with accompanying drawings 2-4 and specific embodiments. It should be noted that the drawings are all in a very simplified form, using imprecise scales, and are only used to facilitate and clearly achieve the purpose of assisting in describing the present embodiment.

[0031] For this example, see Figure 2a and 2b , the single-chip wet cleaning equipment used has a rotary platform 201 for driving the wafer 203 to rotate, the rotary platfo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a monolithic wet cleaning method. The method comprises the steps that the whole wafer is fixedly placed on a rotating platform, and the center of the wafer deviates from the center of the rotating platform; the rotating platform and the wafer rotate around the center of the rotating platform and rotate at a first rotation speed; a liquid spraying process is carried out; a mechanical arm swings to drive a sprinkler to swing; the sprinkler swings by taking the center of the rotating platform as the swing center to form a swing track, so that liquid is sprayed onto the whole upper surface of the wafer; the rotation speed of the rotating platform is improved to a second rotation speed; a de-ionized water spraying process is carried out; the mechanical arm places the sprinkler at a place above the center of the wafer, so that the sprinkler carries out de-ionized water site-directed spraying by taking the center of the wafer as a directed site; after the de-ionized water spraying process is completed, the rotation speed of the rotating platform is adjusted to a third rotation speed; the wafer is dried; and the wafer is removed from the rotating platform. According to the invention, the defect that the stress of the center of the rotating wafer is zero is overcome.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a single-chip wet cleaning method. Background technique [0002] The early wet process mainly adopts tank equipment for batch operation, which has high production efficiency and can also meet the process requirements. However, with the continuous development of the semiconductor process, the size of the silicon wafer has gradually developed from 8 inches to 12 inches and 18 inches, and the minimum line width of the chip has also gradually transitioned from the micron level to the nano level, such as 65nm, 40nm, 32nm, 22nm, etc. . Because its process capability and uniformity can no longer meet the more stringent process requirements, the wet bath equipment has gradually withdrawn from the stage of history in the manufacture of high-end semiconductor products. Monolithic wet-process equipment has gradually become the mainstream wet-process equipment in semiconductor manuf...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02057H01L21/67023
Inventor 姚嫦娲
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products