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Resistive memory cell with trench bottom electrode

A resistive memory, bottom electrode technology, used in electrical components, electrical solid-state devices, circuits, etc.

Inactive Publication Date: 2018-01-16
MICROCHIP TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, limiting the volume of electrolyte material in which the conductive pathways are formed can provide more robust filaments due to space constraints.

Method used

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  • Resistive memory cell with trench bottom electrode
  • Resistive memory cell with trench bottom electrode
  • Resistive memory cell with trench bottom electrode

Examples

Experimental program
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Embodiment Construction

[0034] Figure 4A and 4B A cross-sectional view and a three-dimensional view, respectively, of a resistive memory cell 100 (eg, a CBRAM or ReRAM cell) with a trenched bottom electrode according to an example embodiment are shown. Resistive memory cell 100 includes trenched bottom electrode 102 , electrolyte switching layer or region 104 formed over trenched bottom electrode 102 , and top electrode layer or region 106 formed over electrolyte switching layer region 104 . The trenched bottom electrode 102 may be formed according to any of the techniques disclosed herein, for example, as described below with respect to Figures 11A to 11F , Figures 12A to 12F or Figures 13A to 13L etc. discussed.

[0035] As shown, trenched bottom electrode 102 has an elongated trench-like shape (elongated along the y-axis) that defines a pair of spaced apart sidewalls 110A and 110B connected by trench bottom region 112 . Electrolyte switching region 104 may provide for the formation of con...

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PUM

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Abstract

A CBRAM or ReRAM type resistive memory cell comprising: a top electrode (222); and a trench-shaped bottom electrode structure defining a bottom electrode connection (200) and a first sidewall region ( 214) extending to the sidewall (210) of the tip region (212), wherein the tip surface (216) facing away from the bottom electrode connection has a thickness less than the thickness of the first sidewall region adjacent to the bottom electrode connection . An electrolyte switching region (220) is disposed between the top electrode and the bottom electrode tip region to provide for formation of a surface (216) from the bottom electrode tip surface (216) when a voltage bias is applied to the resistive memory cell. The path of conductive filaments or chains of vacancies (226) through the electrolyte switching region to the top electrode.

Description

[0001] Related patent applications [0002] This application claims the benefit of U.S. Provisional Application No. 61 / 780,187, filed March 13, 2013, entitled "TRENCH ELECTRODE FOR CBRAM MEMORY CELL," which provides The entirety of the application is incorporated herein. technical field [0003] The present invention relates to resistive memory cells, such as conductive bridge random access memory (CBRAM) or resistive random access memory (ReRAM) cells, having trench-shaped bottom electrodes. Background technique [0004] Resistive memory cells, such as conductive bridge memory (CBRAM) and resistive RAM (ReRAM) cells, are a new type of non-volatile memory cell that offer scaling and cost advantages over conventional flash memory cells. CBRAM is based on the physical relocation of ions within a solid electrolyte. A CBRAM memory cell can be made of two solid metal electrodes, one relatively inert (eg, tungsten) and the other electrochemically active (eg, silver or copper), ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10B63/80H10N70/245H10N70/24H10N70/8265H10N70/828H10N70/8418H10N70/8822H10N70/883H10N70/011H10N70/8828H10N70/8833H10N70/826H10N70/841
Inventor 詹姆士·沃尔斯保罗·费斯特
Owner MICROCHIP TECH INC